cerium dopant
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Effect of cerium dopant on the structural and electrical properties of SrMnO3 single perovskite

2021 ◽  
Vol 1226 ◽  
pp. 129391
Author(s):  
P.G.R. Achary ◽  
Asit Amitabh Nayak ◽  
R.K. Bhuyan ◽  
R.N.P. Choudhary ◽  
S.K. Parida
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Cerium Dopant

Preparation method and cerium dopant effects on the properties of BaMnO3 single perovskite

2020 ◽  
Vol 93 (10-11) ◽  
pp. 981-991
Author(s):  
S. K. Parida ◽  
R. N. P. Choudhary
Keyword(s):  
Preparation Method ◽  
Cerium Dopant

Effects of cerium dopant concentration on structural properties and photocatalytic activity of electrospun Ce-doped TiO2 nanofibers

2014 ◽  
Vol 117 (3) ◽  
pp. 1191-1201 ◽  
Author(s):  
Attera Worayingyong ◽  
S. Sang-urai ◽  
M. F. Smith ◽  
Santi Maensiri ◽  
S. Seraphin
Keyword(s):  
Photocatalytic Activity ◽  
Structural Properties ◽  
Dopant Concentration ◽  
Tio2 Nanofibers ◽  
Doped Tio2 ◽  
Cerium Dopant

Growth of SiC by PVT method in the presence of cerium dopant

2013 ◽  
Vol 377 ◽  
pp. 88-95 ◽  
Author(s):  
K. Racka ◽  
E. Tymicki ◽  
K. Grasza ◽  
I.A. Kowalik ◽  
D. Arvanitis ◽  
...  
Keyword(s):  
Cerium Dopant

In Situ Studies of the Nucleation Mechanisms of Tris(cyclopentadienyl)Cerium as Cerium Dopant Source in SrS:Ce Thin Films for Electroluminescent Displays

2001 ◽  
Vol 148 (6) ◽  
pp. C427 ◽  
Author(s):  
Janice E. Lau ◽  
Gregory G. Peterson ◽  
Denis Endisch ◽  
Karl Barth ◽  
Anna Topol ◽  
...  
Keyword(s):  
Thin Films ◽  
In Situ Studies ◽  
Cerium Dopant ◽  
Nucleation Mechanisms ◽  
Dopant Source

MOCVD OF SrS and SrS:Ce Thin Films for Eelctroluminescent Flat Panel displays

1995 ◽  
Vol 415 ◽  
Author(s):  
John A. Samuels ◽  
David C. Smith ◽  
Kerry N. Siebein ◽  
Kenny Salazar ◽  
Richard T. Tuenge ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Material ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
High Quality ◽  
Deposition Rates ◽  
Temperature Range ◽  
Cerium Dopant ◽  
Low Pressure Mocvd ◽  
Film Characteristics

ABSTRACTHigh quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concentration range investigated. Depositions were carried out for a wide temperature range (250–550° C). Deposition rates were found to be relatively insensitive for the temperature range investigated. The films produced were found to be highly crystalline at all temperatures investigated. Deposited material showed texturing as a function of substrate material and temperature. FWHM of the <111> reflections were found to have a 2Θ values of 0.15–0.18 deg. for all temperatures. RBS and AES shows stoichiometric 1:1 SrS with less than 2% carbon and oxygen contaminates. ERD indicates the films to have 1 – 2.5% hydrogen. Films doped with 0.019 – 0.043 atom – 250 volts.

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