Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of Silicon

1987 ◽  
Vol 98 ◽  
Author(s):  
Gottlieb S. Oehrlein ◽  
Steve W. Robey ◽  
Mark A. Jaso
Keyword(s):  
Surface Analysis ◽  
Etch Rate ◽  
Ultrahigh Vacuum ◽  
Silicon Surfaces ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Etched Silicon ◽  
Analysis System ◽  
Fluorocarbon Film

ABSTRACTWe have utilized an ultrahigh vacuum surface analysis system interfaced via a load-lock to a flexible diode dry etching apparatus to study vacuum transferred CF4/H2 reactive ion etched silicon surfaces by X-ray photoemission spectroscopy (XPS). From the observation and analysis of silicon-fluorine bonding underneath the fluorocarbon film and the dependence of the abundance of fluorosilyl species on the thickness of the fluorocarbon overlayer, the role of the fluorocarbon film in the slow-down of the Si etch rate has been elucidated: The role of the fluorocarbon film is to “protect” the Si surface from attack of fluorine, rather than prevent the escape of SiF4 etch product.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Analysis of SF6and F2plasma etched silicon surfaces: An x‐ray photoelectron spectroscopy investigation

1990 ◽  
Vol 57 (25) ◽  
pp. 2649-2650 ◽  
Author(s):  
P. Brault ◽  
P. Ranson ◽  
H. Estrade‐Szwarckopf ◽  
B. Rousseau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
X Ray ◽  
Etched Silicon

Variations in the Photoluminescence Intensity of Chemically and Anodically Etched Silicon Films

1993 ◽  
Vol 298 ◽  
Author(s):  
P.S Williams ◽  
J.N. Kidder ◽  
H. Yun ◽  
D. Crain ◽  
T.P. Pearsall
Keyword(s):  
Luminescent Properties ◽  
Silicon Films ◽  
Photoluminescence Intensity ◽  
Ambient Conditions ◽  
X Ray ◽  
Initial Characterization ◽  
Etched Silicon ◽  
Free Films

AbstractWe are studying the effects of etch conditions on the surface morphology, chemistry, and luminescent properties of porous silicon (PS) films. Luminescent silicon films are produced by chemical etching using solutions of HNO3 in HF and by anodic etching using aqueous HF electrolytes. Films produced by both methods are analyzed and compared using photoluminescence (PL), vibrational, and X-ray photoelectron (XPS) spectroscopies. The initial characterization of PS is performed immediately following the etching process, resulting in oxide-free films (as confirmed by XPS). In chemically etched PS films, the luminescent intensity decreases as the vol. % HNO3 in etch solution increases. Spectral features evolve in the PL spectrum of chemically etched films as the result of aging under ambient conditions and when the films are cooled under illumination. Moreover, we have also found that increased electrolyte convection results in a decrease in photoluminescence intensity of PS films formed anodically. The role of electrolyte flow in modifying the luminescent properties of PS is being evaluated in an etch cell with well-characterized hydrodynamics.

An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces

1998 ◽  
Vol 5 (3) ◽  
pp. 1029-1031
Author(s):  
Munehiro Sugiyama ◽  
Satoshi Maeyama
Keyword(s):  
Standing Wave ◽  
Photoelectron Spectroscopy ◽  
Ultrahigh Vacuum ◽  
Semiconductor Surfaces ◽  
X Rays ◽  
Edge Structure ◽  
X Ray ◽  
Annealing Effects ◽  
Analysis System

An ultrahigh-vacuum goniometer was developed for in situ X-ray standing-wave (XSW) analysis of semiconductor surfaces prepared by molecular-beam epitaxy (MBE). Although two ultrahigh-vacuum motors for χ and φ rotating axes are inside the analysis chamber, low-energy photoelectrons can still be collected as the magnetic field is sufficiently suppressed by using metal shields. Furthermore, the sample can be annealed at temperatures higher than 870 K on the goniometer in the analysis chamber. This goniometer is used at beamline 1A (BL-1A) at the Photon Factory, where both monochromated soft X-rays and UV radiation are available. This analysis system was shown to be suitable not only for in situ soft-XSW and X-ray absorption near-edge structure (XANES) studies but also for synchrotron radiation photoelectron spectroscopy (SRPES) studies. The annealing effects on an S-adsorbed GaAs(001) surface could be studied by SRPES, XANES and XSW using this new goniometer.

Ultrahigh‐vacuum system for surface studies using high‐energy ion scattering and x‐ray photoemission spectroscopy

1987 ◽  
Vol 58 (12) ◽  
pp. 2284-2287 ◽  
Author(s):  
R. J. Smith ◽  
C. N. Whang ◽  
Xu Mingde ◽  
M. Worthington ◽  
C. Hennessy ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
High Energy ◽  
Vacuum System ◽  
Photoemission Spectroscopy ◽  
Ion Scattering ◽  
Surface Studies ◽  
X Ray
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