Ultrahigh‐vacuum system for surface studies using high‐energy ion scattering and x‐ray photoemission spectroscopy

1987 ◽  
Vol 58 (12) ◽  
pp. 2284-2287 ◽  
Author(s):  
R. J. Smith ◽  
C. N. Whang ◽  
Xu Mingde ◽  
M. Worthington ◽  
C. Hennessy ◽  
...  
1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.


Author(s):  
Y. Harada ◽  
Y. Ishida ◽  
Y. Arai ◽  
K. Ooi ◽  
Y. Obara

Analytical electron microscopes (AEM), which provide the functions of transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy, have been in practical use to analyze elements in microareas. Meanwhile, surface studies have recently been conducted with an ultrahigh vacuum (UHV) electron microscope by utilizing reflection electron microscopy including the reflection high energy electron diffraction method. We have developed an ultrahigh vacuum analytical electron microscope (UHVAEM) aimed at surface studies.The present paper describes the outstanding features of the UHVAEM. Fig. 1 shows the schematic diagram of its vacuum system. The specimen and gun chambers are evacuated by a sputter ion pump (SIP) after being rough pumped by a turbo molecular pump (TMP). The viewing and camera chambers which have much out-gas from photographic films are evacuated by the TMP. The image forming lens system is designed to provide constant projector lens excitation over the entire magnification range.


1988 ◽  
Vol 37 (12) ◽  
pp. 4730-4733 ◽  
Author(s):  
S. Svensson ◽  
E. Zdansky ◽  
U. Gelius ◽  
H. Ågren

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.


2015 ◽  
Vol 93 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Qunfeng Xiao ◽  
Xiaoyu Cui ◽  
Yinbo Shi ◽  
Yongfeng Hu ◽  
Tsun-Kong Sham ◽  
...  

Photoemission spectroscopy (PES) has been used widely to study the electronic structure of valence and core levels. However, conventional PES is surface-sensitive. To probe the interface and bulk properties of materials, hard X-ray photoemission spectroscopy (HXPES) has received increasing interest in the last decade, because of the deep probing ability of photoelectrons with higher kinetic energies (2–10 keV). Recently, a HXPES system was developed at the Canadian Light Source, using the high-energy version of a R4000 electron analyzer-based spectrometer connected to a medium-energy beamline, the soft X-ray microcharacterization beamline (SXRMB). Excellent performance of the beamline and the spectrometer is demonstrated herein using Au Fermi and 4f core lines; and the controlled probing depth of HXPES at SXRMB is demonstrated by tuning the photon energy (2–9 keV) in the study of a series of SiO2/SiC multilayer samples. Combined with the high-resolution X-ray absorption spectroscopy available at the SXRMB, the HXPES offers a powerful nondestructive technique for studying bulk properties of various materials.


2017 ◽  
Author(s):  
M.-Y. Wu ◽  
V. Ilakovac ◽  
J.-M. André ◽  
K. Le Guen ◽  
A. Giglia ◽  
...  

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