Plasma Chemical Aspects of Magnetron Ion Etching with CF4/O2 and CF4/H2

1987 ◽  
Vol 98 ◽  
Author(s):  
A. A. Bright ◽  
S. Kaushik ◽  
G. S. Oehrlein
Keyword(s):  
Semiconductor Manufacturing ◽  
Plasma Chemistry ◽  
Operating Pressure ◽  
Plasma Chemical ◽  
Ion Etching ◽  
Ion Density ◽  
Atom Concentration ◽  
Manufacturing Applications ◽  
Etching System ◽  
Ionization Rates

ABSTRACTMagnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4, CF4/O2, and CF4/H2 with respect to the plasma chemistry and the interaction of the plasma with the etched substrate. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. Addition of H2 suppresses the F atom concentration slightly, produces very little C-F polymer, and does not lead to highly selective etching of SiO2 over Si. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE.

Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

1984 ◽  
Vol 38 ◽  
Author(s):  
Ch. Steinbruchel ◽  
H. W. Lehmann ◽  
K. Frick
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Ion Density ◽  
Ion Beam Etching ◽  
Plasma Species ◽  
Parallel Plate Reactor ◽  
Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

On-the-Fly Substrate Eccentricity Recognition for Robotized Manufacturing Systems

2005 ◽  
Vol 127 (1) ◽  
pp. 206-216 ◽  
Author(s):  
Martin Hosek ◽  
Jan Prochazka
Keyword(s):  
Optical Sensors ◽  
Semiconductor Manufacturing ◽  
Manufacturing Systems ◽  
Robotic Manipulator ◽  
End Effector ◽  
Transfer Path ◽  
The Difference ◽  
Manufacturing Applications ◽  
Actual Location

This paper describes a method for on-the-fly determination of eccentricity of a circular substrate, such as a silicon wafer in semiconductor manufacturing applications, carried by a robotic manipulator, where eccentricity refers to the difference between the actual location of the center of the substrate and its desired position on the end-effector of the robotic manipulator. The method utilizes a pair of external optical sensors located along the substrate transfer path. When moving a substrate along the transfer path, the robotic manipulator captures the positions and velocities of the end-effector at which the edges of the substrate are detected by the sensors. These data along with the expected radius of the substrate and the coordinates of the sensors are used to determine the eccentricity of the substrate. This information can be used by the robotic manipulator to compensate for eccentricity of the substrate when performing a place operation, resulting in the substrate being placed centered regardless of the amount and direction of the initial eccentricity. The method can also be employed to detect a defect, such as breakage, of a circular substrate and report an error condition which can abort or otherwise adjust operation of the robotic manipulator.

Plasma Processing in Semiconductor Manufacturing

1986 ◽  
Vol 68 ◽  
Author(s):  
Clarence J. Tracy
Keyword(s):  
Manufacturing Process ◽  
Semiconductor Manufacturing ◽  
Plasma Deposition ◽  
Reactive Ion Etching ◽  
Plasma Processing ◽  
Development Work ◽  
Ion Etching ◽  
Product Flow ◽  
Subsequent Processing

AbstractThe implementation of plasma deposition and reactive ion etching into a semiconductor VLSI manufacturing process is rarely trivial.In some cases isolated process modules may appear to function well until integrated into a lengthy product flow, where interactions occur with prior or subsequent processing steps.In addition, dry processes have some unique and sometimes undesirable characteristics which need to be considered.Examples of both of these kinds of problems will be shown.Opportunities still exist for research to lead to a better understanding of mechanisms and for development work to improve the equipment and specific processes.

GaAs Taper Etching by Mixture Gas Reactive Ion Etching System

1991 ◽  
Vol 30 (Part 2, No. 12B) ◽  
pp. L2136-L2138
Author(s):  
Makoto Hirano ◽  
Kazuyoshi Asai
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching System

Etching of 6H‐SiC and 4H‐SiC using  NF 3 in a Reactive Ion Etching System

1996 ◽  
Vol 143 (5) ◽  
pp. 1750-1753 ◽  
Author(s):  
J. B. Casady ◽  
E. D. Luckowski ◽  
M. Bozack ◽  
D. Sheridan ◽  
R. W. Johnson ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching System
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