Plasma Processing in Semiconductor Manufacturing

1986 ◽  
Vol 68 ◽  
Author(s):  
Clarence J. Tracy
Keyword(s):  
Manufacturing Process ◽  
Semiconductor Manufacturing ◽  
Plasma Deposition ◽  
Reactive Ion Etching ◽  
Plasma Processing ◽  
Development Work ◽  
Ion Etching ◽  
Product Flow ◽  
Subsequent Processing

AbstractThe implementation of plasma deposition and reactive ion etching into a semiconductor VLSI manufacturing process is rarely trivial.In some cases isolated process modules may appear to function well until integrated into a lengthy product flow, where interactions occur with prior or subsequent processing steps.In addition, dry processes have some unique and sometimes undesirable characteristics which need to be considered.Examples of both of these kinds of problems will be shown.Opportunities still exist for research to lead to a better understanding of mechanisms and for development work to improve the equipment and specific processes.

Applications of Control to Semiconductor Manufacturing: Reactive Ion Etching

1993 ◽  
Author(s):  
M. Elta ◽  
H. Etemad ◽  
J. S. Freudenberg ◽  
M. D. Giles ◽  
J. W. Grizzle ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Reactive Ion Etching ◽  
Ion Etching

Development of a Manufacturing Process for Polyimide-Based Microstructured Devices Using Reactive Ion Etching

2019 ◽  
Author(s):  
Jens Bobers ◽  
Maurice Hesselmann ◽  
Arndt-Christian Schneider ◽  
Jakob Zimmermann ◽  
Norbert Kockmann
Keyword(s):  
Surface Roughness ◽  
Manufacturing Process ◽  
Chemical Engineering ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Continuous Phase ◽  
Two Phase ◽  
Ion Etching ◽  
Reactor Geometry ◽  
Chip Geometry

Abstract Miniaturization and modularization are fast growing fields in chemical engineering in recent years. Fast and flexible production processes for microstructured devices are desirable to meet the requirements of rapid prototyping and flexible chip manufacturing. Reactive ion etching provides a structuring process which leads to a highly precise and anisotropic etching behavior. A new manufacturing process for polyimide-based microstructured devices with low surface roughness was developed and applied on reactor geometry for liquid-liquid two-phase-flow. The fabricated chip geometry is designed for creating droplets via flow focusing as the dispersed phase is incised by two continuous phase inlet streams. The droplets are created in the widening channel. In order to keep the pressure loss for the developed reactor geometry and the production time as small as possible, the manufacturing process was optimized with a view to minimize surface roughness and maximizing the etching rate by using Design of Experiments. The corresponding pressure drop was measured for flow rates from 0.05 ml min−1 to 0.5 ml min−1.

NanoProbing on 7 nm FinFET Devices in an SRAM Array: Challenges and Solutions

2019 ◽  
Author(s):  
Anqi Qiu ◽  
William Lowe ◽  
Mridul Arora
Keyword(s):  
Manufacturing Process ◽  
Semiconductor Manufacturing

Abstract Nanoprobing systems have evolved to meet the challenges from recent innovations in the semiconductor manufacturing process. This is demonstrated through an exhibition of standard SRAM measurements on TSMC 7 nm FinFET technology. SEM based nanoprober is shown to meet or exceed the requirements for measuring 7nm technology and beyond. This paper discusses in detail of the best-known methods for nanoprobing on 7nm technology.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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