Interaction of Reactive Species Obtained by G-D Silane Decomposition with Si(111) and a-Si:H Surfaces
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AbstractWe calculate the average surface potential barrier for incorporation of H, Si, SiHb (n=1–4) into films of a-Si:H as well as crystalline Si(111) surfaces. In the first case a local amorphous configuration for the surface is employed through a representative cluster(Si29 H1 0 ) forming 5, 6, 7 Si atom rings. For the crystalline surface, several layers of Si atoms are considered. Pairwise superposition of combined Morse and Thomas-Fermi-Moliére interatomic potentials is assumed for the total interaction between the incoming species and the surface.
1986 ◽
Vol 58
(10)
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pp. 729-733
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2000 ◽
Vol 177
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pp. 463-464
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1960 ◽
Vol 11
(1)
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pp. 53-57
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