scholarly journals Determination of the surface-potential barrier of Cu(001) from low-energy-electron-diffraction fine structure

1991 ◽  
Vol 44 (8) ◽  
pp. 3939-3942 ◽  
Author(s):  
G. J. Hitchen ◽  
S. M. Thurgate ◽  
P. J. Jennings
Keyword(s):  
Fine Structure ◽  
Electron Diffraction ◽  
Potential Barrier ◽  
Surface Potential ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Dynamical effects of the surface potential barrier in very low energy electron diffraction

1983 ◽  
Vol 126 (1-3) ◽  
pp. A107
Author(s):  
J. Lopez ◽  
J.C. Le Bossé ◽  
C. Gaubert ◽  
R. Baudoing ◽  
Y. Gauthier
Keyword(s):  
Electron Diffraction ◽  
Potential Barrier ◽  
Surface Potential ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Dynamical effects of the surface potential barrier in very low energy electron diffraction

1983 ◽  
Vol 126 (1-3) ◽  
pp. 286-293 ◽  
Author(s):  
J. Lopez ◽  
J.C. Le Bossé ◽  
C. Gaubert ◽  
R. Baudoing ◽  
Y. Gauthier
Keyword(s):  
Electron Diffraction ◽  
Potential Barrier ◽  
Surface Potential ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

scholarly journals Low-energy-electron-diffraction fine structure in W(001) for energies from 0 to 35 eV

1985 ◽  
Vol 32 (10) ◽  
pp. 6131-6137 ◽  
Author(s):  
J.-M. Baribeau ◽  
J.-D. Carette ◽  
P. J. Jennings ◽  
R. O. Jones
Keyword(s):  
Fine Structure ◽  
Electron Diffraction ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

STRUCTURE DETERMINATION OF THE 1 × 1GaN(0001) SURFACE BY QUANTITATIVE LOW ENERGY ELECTRON DIFFRACTION

2003 ◽  
Vol 10 (06) ◽  
pp. 831-836 ◽  
Author(s):  
Z. X. YU ◽  
S. Y. TONG ◽  
SHIHONG XU ◽  
SIMON MA ◽  
HUASHENG WU
Keyword(s):  
Electron Diffraction ◽  
Simulated Annealing Algorithm ◽  
Experimental Studies ◽  
Interlayer Spacing ◽  
Low Energy ◽  
Energy Electron ◽  
Bilayer Thickness ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

A quantitative structural determination of the Ga-polar 1×1 (0001) surface of GaN is performed by quantitative low energy electron diffraction (LEED). The global best-fit structure is obtained by a new frozen LEED approach connected to a simulated annealing algorithm. The global minimization frozen (GMF) LEED search finds that the ordered structure consists of 1 ML of Ga adatoms at atop sites above Ga-terminated bilayers. The Ga adatoms are bonded with a Ga–Ga bond length of 2.51 Å. The spacings within surface bilayers show a weak oscillatory trend, with the outmost bilayer thickness expanding to 0.72 Å and the next bilayer thickness contracting to 0.64 Å, compared to the bulk thickness of 0.65 Å. The interlayer spacing between the first and second bilayers is 1.89 Å, while the next interlayer spacing is 1.94 Å, compared to the bulk value of 1.95 Å. These results are compared with data from other theoretical and experimental studies.

Sign in / Sign up

Export Citation Format

Share Document