Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.

Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.

A comprehensive review is provided on the basic theory, structure design, fabrication, and performance characterization of the NEA GaN photocathode.