The penetrability of a Thomas-Fermi potential barrier

1960 ◽  
Vol 11 (1) ◽  
pp. 53-57 ◽  
Author(s):  
T. Tietz
1987 ◽  
Vol 95 ◽  
Author(s):  
S. A. Cruz ◽  
V. M. Mendez-Rosales

AbstractWe calculate the average surface potential barrier for incorporation of H, Si, SiHb (n=1–4) into films of a-Si:H as well as crystalline Si(111) surfaces. In the first case a local amorphous configuration for the surface is employed through a representative cluster(Si29 H1 0 ) forming 5, 6, 7 Si atom rings. For the crystalline surface, several layers of Si atoms are considered. Pairwise superposition of combined Morse and Thomas-Fermi-Moliére interatomic potentials is assumed for the total interaction between the incoming species and the surface.


2004 ◽  
Vol 99 (1) ◽  
pp. 189-196 ◽  
Author(s):  
V. N. Vasyukov ◽  
A. D. Prokhorov ◽  
V. P. D’yakonov ◽  
H. Szymczak

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