Surface Charge Imaging in Semiconductor Wafers by Surface Photovoltage (SPV)

1992 ◽  
Vol 261 ◽  
Author(s):  
Piotr Edelman ◽  
Jacek Lagowski ◽  
Lubek Jastrzebski
Keyword(s):  
Surface Charge ◽  
Potential Barrier ◽  
Surface Potential ◽  
Surface Photovoltage ◽  
High Excitation ◽  
Wafer Scale ◽  
Contact Measurement

ABSTRACTWe present fast, wafer-scale imaging of the surface charge achieved via non-contact measurement of the surface potential barrier by surface photovoltage (SPV) under high excitation levels. The approach is capable of resolving surface charge differences as small as 108 q/cm2. Fundamentals of surface charge imaging are discussed, and the method is compared with standard SPV contamination mapping. Examples include problems relevant to silicon IC fabrication and surface charge maps of GaAs and InP.

scholarly journals Phase Transition Effect on Ferroelectric Domain Surface Charge Dynamics in BaTiO3 Single Crystal

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4463
Author(s):  
Dongyu He ◽  
Xiujian Tang ◽  
Yuxin Liu ◽  
Jian Liu ◽  
Wenbo Du ◽  
...  
Keyword(s):  
Phase Transition ◽  
Domain Wall ◽  
Single Crystal ◽  
Surface Charge ◽  
Potential Barrier ◽  
Surface Potential ◽  
Topological Defects ◽  
Ferroelectric Domain ◽  
Charge Dynamics ◽  
Surrounding Environment

The ferroelectric domain surface charge dynamics after a cubic-to-tetragonal phase transition on the BaTiO3 single crystal (001) surface was directly measured through scanning probe microscopy. The captured surface potential distribution shows significant changes: the domain structures formed rapidly, but the surface potential on polarized c domain was unstable and reversed its sign after lengthy lapse; the high broad potential barrier burst at the corrugated a-c domain wall and continued to dissipate thereafter. The generation of polarization charges and the migration of surface screening charges in the surrounding environment take the main responsibility in the experiment. Furthermore, the a-c domain wall suffers large topological defects and polarity variation, resulting in domain wall broadening and stress changes. Thus, the a-c domain wall has excess energy and polarization change is inclined to assemble on it. The potential barrier decay with time after exposing to the surrounding environment also gave proof of the surface screening charge migration at surface. Thus, both domain and domain wall characteristics should be taken into account in ferroelectric application.

Characterization of Surface Cleans by Surface Photovoltage and Surface Charge Imaging

1993 ◽  
Vol 315 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Lubek Jastrzebski
Keyword(s):  
Surface Charge ◽  
Surface Photovoltage

Evolution of surface potential barrier for negative-electron-affinity GaAs photocathodes

2009 ◽  
Vol 105 (1) ◽  
pp. 013714 ◽  
Author(s):  
Jijun Zou ◽  
Benkang Chang ◽  
Zhi Yang ◽  
Yijun Zhang ◽  
Jianliang Qiao
Keyword(s):  
Potential Barrier ◽  
Surface Potential ◽  
Electron Affinity ◽  
Negative Electron Affinity
Sign in / Sign up

Export Citation Format

Share Document