Photoconductivity Decay in Amorphous Semiconductors

1987 ◽  
Vol 95 ◽  
Author(s):  
William Pickin ◽  
Doroteo Mendoza ◽  
Juan Carlos Alonso
Keyword(s):  
Steady State ◽  
Decay Time ◽  
Minority Carrier ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Decay Process ◽  
Intensity Dependence ◽  
Multiple Trapping ◽  
Photoconductivity Decay ◽  
Hydrogenated Amorphous

AbstractBased on modifications of the standard multiple trapping approach we present a theory of photoconductivity decay from the steady state in which explicit account is taken of the minority carrier behaviour. We use this to develop a physical understanding of the decay process. We obtain the intensity dependence of the decay time and compare it with experimental results for hydrogenated amorphous silicon.

scholarly journals Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

2002 ◽  
Vol 17 (5) ◽  
pp. 977-980 ◽  
Author(s):  
Wei-Fang Su ◽  
Hong-Ru Guo
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Quenching ◽  
Amorphous Semiconductors ◽  
Electronic Density ◽  
Quenching Effect ◽  
Oxide Powders ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

On the Role of the Staebler-WronSki Susceptibility in Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
G. Irrera ◽  
G. Masini ◽  
F. Palma ◽  
...  
Keyword(s):  
Hydrogenated Amorphous Silicon ◽  
Bond Breaking ◽  
Degradation Behaviour ◽  
Fitting Procedure ◽  
Photoconductivity Decay ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Recombination Kinetics ◽  
Monochromatic Illumination

Photoconductivity decay during monochromatic illumination has been measured on an ensemble of a-Si:H films deposited at different substrate temperatures. Degradation behaviour has been modelled within the framework of the bond-breaking model (dN/dt = Csw np). Simmons and Taylor recombination kinetics has been assumed, taking into account the divalent nature of dangling bonds and their three possible conditions of occupancy. The Staebler-Wronski susceptibility (Csw) has been extracted through a fitting procedure. As a result, a correlation between the obtained Csw and the measured electronic, optical and structural properties of as deposited a-Si:H films can be inferred.

Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range

1993 ◽  
Vol 297 ◽  
Author(s):  
Nobuhiro Hata ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Steady State ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Continuous Light ◽  
Effective Rate ◽  
Defect States ◽  
Carrier Generation ◽  
Wide Range ◽  
Hydrogenated Amorphous

Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8 x 1021 to 2.4 × 1023 cm-3 s-1, while the illumination temperature was kept at 30 °C or at 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.

A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method

1987 ◽  
Vol 95 ◽  
Author(s):  
I. Balberg
Keyword(s):  
Hydrogenated Amorphous Silicon ◽  
Voltage Characteristic ◽  
Amorphous Semiconductors ◽  
Schottky Barriers ◽  
State Distribution ◽  
Capacitance Method ◽  
Capacitance Voltage ◽  
Silicon Materials ◽  
Hydrogenated Amorphous

AbstractA new method for the determination of the deep states density in amorphous semiconductors is presented. The method is based on the carriersemission- time dependence of the capacitance-voltage characteristics of Schottky barriers. The applicability of the method for the study of hydrogenated amorphous silicon materials is demonstrated. The pitfalls associated with trying to deduce the density of states from a single capacitance-voltage characteristic are also discussed.

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