Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon

2007 ◽  
Vol 102 (5) ◽  
pp. 053711 ◽  
Author(s):  
A. Reznik ◽  
S. D. Baranovskii ◽  
O. Rubel ◽  
G. Juska ◽  
S. O. Kasap ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Amorphous Selenium ◽  
Avalanche Multiplication ◽  
Hydrogenated Amorphous

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

scholarly journals Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

2002 ◽  
Vol 17 (5) ◽  
pp. 977-980 ◽  
Author(s):  
Wei-Fang Su ◽  
Hong-Ru Guo
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Quenching ◽  
Amorphous Semiconductors ◽  
Electronic Density ◽  
Quenching Effect ◽  
Oxide Powders ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

Temperature Dependent Carrier Transport in Hydrogenated Amorphous Semiconductors for Thin Film Memristive Applications

2022 ◽  
Vol 1048 ◽  
pp. 182-188
Author(s):  
Mayank Chakraverty ◽  
V.N. Ramakrishnan
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Materials ◽  
Carrier Transport ◽  
Hole Concentration ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Effect Of Temperature ◽  
Temperature Dependent ◽  
Different Temperatures ◽  
Hydrogenated Amorphous

This paper demonstrates the transport of electron and hole carriers in two distinct hydrogenated amorphous semiconductor materials at different temperatures. Compared to crystalline materials, the amorphous semiconductors differ structurally, optically and electrically, hence the nature of carrier transport through such amorphous materials differ. Materials like hydrogenated amorphous silicon and amorphous IGZO have been used for the study of temperature dependent carrier transport in this paper. Simulation results have been presented to show the variation of free electron and hole concentration, trapped electron and hole concentration with energy at 300K for both the materials. The change in mobility with a change in the Fermi level has been plotted for different temperatures. The effect of temperature on Brownian motion mobility of electrons and holes in hydrogenated amorphous silicon and amorphous IGZO has been demonstrated towards the end of this paper.

Hot‐electron‐induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon

1995 ◽  
Vol 77 (12) ◽  
pp. 6354-6357 ◽  
Author(s):  
Toshihiko Toyama ◽  
Kazuhiro Hiratsuka ◽  
Hiroaki Okamoto ◽  
Yoshihiro Hamakawa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Electron ◽  
Avalanche Multiplication ◽  
Hydrogenated Amorphous

Magnetic Resonance Probes Of Band Tail States And Defects In Tetrahedrally Coordinated Amorphous Semiconductors

2002 ◽  
Vol 715 ◽  
Author(s):  
P. C. Taylor
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Dangling Bonds ◽  
Band Tail ◽  
Wide Range ◽  
Recombination Processes ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

AbstractRecent electron spin resonance (ESR) results relating to (1) recombination processes for optically excited electrons and holes in tetrahedrally coordinated amorphous semiconductors and (2) kinetics of metastable defects (dangling bonds associated with the Staebler-Wronski effect) in hydrogenated amorphous silicon (a-Si:H). With regard to recombination processes, ESR measurements have been performed over a wide range of excitation intensities (nW/cm2 to W/cm2) on hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous germanium (a-Ge:H). The kinetics can be studied down to carrier densities as low as 1014 cm-3. The longtime decay curves show that at large carrier separation (1) the random distribution of optically excited electrons and holes is subject to the condition of charge neutrality, and (2) the decays are universal and independent of the densities of localized, band-tail states. With regard to the metastable defects in a-Si:H, the kinetics of the production and thermal annealing of silicon dangling bonds have been measured at temperatures between 25 and 480 K using ESR. Below about 150 K the measurement of the dangling bonds is masked by long-lived, band tail carriers that accumulate with time. The production rate for silicon dangling bonds decreases with decreasing temperature and is nearly temperature independent below approximately 100 K. Defects created by 10 hours of irradiation below 100 K anneal almost completely at 300 K. In a- Ge:H, the first measurements of optically induced, metastable germanium dangling bonds have been made.

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