Parameterization of charge transport process with avalanche multiplication in irradiated Si p-i-n structures at T = 1.9 K

The study is devoted to the treatment of in situ radiation tests results for silicon p-i-n detectors of relativistic protons, which showed the two-stage process of charge transport with avalanche multiplication at a temperature of 1.9 K. The goal of the work is to extract the carrier transport parameters from the experimental data obtained by transient current technique. For that, the impact of a spatial nonuniformity of carrier generation by the laser and spreading of the drifting carrier cloud due to diffusion on the current pulse response formation were considered. The mathematical procedure proposed for the current pulse simulation showed a key contribution of avalanche multiplication in the signal formation and allowed direct estimation of the multiplication factor from the experimental pulses. It is found that this factor only slightly depends on the bias voltage, which suggests the electric field inside the detector to be affected by the space-charge-limited current.

Beam-induced surface modifications as a critical source of heat loads in the Large Hadron Collider

Beam-induced heat loads on the cryogenic regions of the Large Hadron Collider (LHC) exhibit a wide and unexpected dispersion along the accelerator, with potential impact on the performance of its High-Luminosity upgrade. Studies related the heat load source to the avalanche multiplication of electrons at the surface of the beam vacuum chamber, a phenomenon known as electron could build-up. Here, we demonstrate that the topmost copper surface of beam pipes extracted from a low heat load region of the LHC consists of native Cu2O, while the pipe surface from a high heat load region had been oxidized to CuO during LHC operation and maintenance cycles. Experiments show that this process increases the secondary electron yield and inhibits efficient surface conditioning, thus enhancing the electron cloud intensity during LHC operation. This study relates the abnormal LHC heat loads to beam-induced surface modifications of its beam pipes, enabling the development of curative solutions to overcome this critical limitation.

Electron runaway in ASDEX Upgrade experiments of varying core temperature

The formation of a substantial postdisruption runaway electron current in ASDEX Upgrade material injection experiments is determined by avalanche multiplication of a small seed population of runaway electrons. For the investigation of these scenarios, the runaway electron description of the coupled 1.5-D transport solvers ASTRA-STRAHL is amended by a fluid model describing electron runaway caused by the hot-tail mechanism. Applied in simulations of combined background plasma evolution, material injection and runaway electron generation in ASDEX Upgrade discharge #33108, both the Dreicer and hot-tail mechanism for electron runaway produce only ${\sim }$ 3 kA of runaway current. In colder plasmas with core electron temperatures $T_\textrm {e,c}$ below 9 keV, the postdisruption runaway current is predicted to be insensitive to the initial temperature, in agreement with experimental observations. Yet in hotter plasmas with $T_\textrm {e,c}$ above 10 keV, hot-tail runaway can be increased by up to an order of magnitude, contributing considerably to the total postdisruption runaway current. In ASDEX Upgrade high-temperature runaway experiments, however, no runaway current is observed at the end of the disruption, despite favourable conditions for both primary and secondary runaway.

Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs

The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.