On the Role of the Staebler-WronSki Susceptibility in Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
G. Irrera ◽  
G. Masini ◽  
F. Palma ◽  
...  
Keyword(s):  
Hydrogenated Amorphous Silicon ◽  
Bond Breaking ◽  
Degradation Behaviour ◽  
Fitting Procedure ◽  
Photoconductivity Decay ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Recombination Kinetics ◽  
Monochromatic Illumination

Photoconductivity decay during monochromatic illumination has been measured on an ensemble of a-Si:H films deposited at different substrate temperatures. Degradation behaviour has been modelled within the framework of the bond-breaking model (dN/dt = Csw np). Simmons and Taylor recombination kinetics has been assumed, taking into account the divalent nature of dangling bonds and their three possible conditions of occupancy. The Staebler-Wronski susceptibility (Csw) has been extracted through a fitting procedure. As a result, a correlation between the obtained Csw and the measured electronic, optical and structural properties of as deposited a-Si:H films can be inferred.

Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

1985 ◽  
Vol 49 ◽  
Author(s):  
Martin Stutzmann ◽  
Warren B. Jackson ◽  
Chuang Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Mechanical Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Material Parameters ◽  
Kinetic Behaviour ◽  
Proposed Model ◽  
Special Cases ◽  
The Stability ◽  
Hydrogenated Amorphous

AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

The role of the blocking structure in hydrogenated amorphous silicon vidicon targets

1981 ◽  
Vol 52 (12) ◽  
pp. 7275-7280 ◽  
Author(s):  
Shunri Oda ◽  
Keishi Saito ◽  
Hisashi Tomita ◽  
Isamu Shimizu ◽  
Eiichi Inoue
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

Role of Hydrogen Microstructure in Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
Sufi Zafar ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Unified Description

ABSTRACTA model for correlating the observed properties of hydrogenated amorphous silicon (a-Si:H) with the underlying hydrogen microstructure is reviewed. The model provides a unified description of defect equilibration, hydrogen evolution, rehydrogenation and hydrogen diffusion measurements.

The Role of Deep Defect Relaxation Dynamics in Optical Processes in Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Fan Zhong ◽  
J. David Cohen
Keyword(s):  
Relaxation Dynamics ◽  
Energy Position ◽  
Defect Band ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Long Time ◽  
Intimate Relation ◽  
Hydrogenated Amorphous ◽  
Defect Relaxation

ABSTRACTWe report results of a transient modulated photocurrent technique which allows us to observe the time evolution of the D0 sub-band under the application of optical bias light and after turning off this bias light Our measurements show that the D0 band shifts monotonically to shallower thermal energies after the bias light is applied, with roughly 10 seconds to saturation at 300K and to deeper thermal energies after removing the bias light, with a decay time of over 1000 seconds. We have also found there exists an intimate relation between the motion of the D0 band and that of the quasi Fermi level as deduced from the transient photoconductivity and therefore, in particular, to the long time photoconductivity decay. This relation is exactly reproduced by the assumption of a D0 band whose energy position evolves in time, together with a recombination process dominated by changes in the charge state of a deeper defect band under light bias.

scholarly journals Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes

RSC Advances ◽  
2017 ◽  
Vol 7 (31) ◽  
pp. 19189-19196 ◽  
Author(s):  
Z. Marvi ◽  
S. Xu ◽  
G. Foroutan ◽  
K. Ostrikov ◽  
I. Levchenko
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Film Structure ◽  
Multiscale Modelling ◽  
Structure And Properties ◽  
Growth Processes ◽  
Chemical Mechanisms ◽  
Physical And Chemical ◽  
Hydrogenated Amorphous

Physical and chemical mechanisms and role of plasma in the synthesis of hydrogenated amorphous silicon were studied numerically to reveal the key growth processes and, hence, to ensure a higher level of control over the film structure and properties.

Effects of Intermittent Deposition on the Defect Density in a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Toshihiro Kamei ◽  
Nobuhiro Hata ◽  
Akihisa Matsuda
Keyword(s):  
Waiting Time ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Desorption ◽  
Growth Surface ◽  
Dangling Bond ◽  
Monolayer Growth ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Mechanical Shutter

ABSTRACTEffects of intermittent deposition on the defect density in hydrogenated Amorphous silicon (a-Si:H) are investigated at various substrate temperatures by using a mechanical shutter, while maintaining the discharge continuously. The intermittent deposition experiments, where monolayer growth and intermission (waiting time) are repeated in cycles, enable us to study surface dangling bond (DB) recombination and thermal hydrogen desorption separately from other reactions on the growth surface. The defect density in films prepared at lower substrate temperatures decreases with the waiting time, while that deposited at higher substrate temperatures increases with the waiting time.

Effect of Deposition-Induced Annealable Defects on Light-Induced Defect Generation in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Jong-Hwan Yoon
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Generation Rate ◽  
Defect Generation ◽  
Saturated State ◽  
Microscopic Models ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

In this paper we present a method to determine the annealable defect density(ΔNann) present in hydrogenated amorphous silicon(a-Si:H). The effects of the annealable defects on the light-induced defect generation rate, saturated defect density (Nsat) and the change of defect density in the light-induced saturated state(ΔNsat) have been studied. Annealable defect density was varied by depositing samples at various substrate temperatures or by post-growth anneals of samples grown at low substrate temperatures. It is found that the generation rate, N satand ΔNsat are well correlated with ΔNann. In particular, the ΔNsat is found to follow a relation ΔNsat ≈ ΔNann. These results suggest that defect-related microscopic models are appropriate for light-induced metastability.

CORRELATION BETWEEN Er3+ EMISSION AND THE MICROSTRUCTURE OF A-SiOx:H FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4246-4249 ◽  
Author(s):  
C. Y. CHEN ◽  
W. D. CHEN ◽  
S. F. SONG ◽  
C. C. HSU
Keyword(s):  
Amorphous Silicon ◽  
Strong Influence ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Suboxide ◽  
Two Phases ◽  
Hydrogenated Amorphous ◽  
Intrinsic Emission ◽  
Hydrogen Effusion

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide ( a - SiO X : H 〈 Er 〉( x <2.0)) films was measured. Two luminescence bands with maxima at λ ≅ 750 nm and λ ≅ 1.54μ m, ascribed to the a - SiO x : H intrinsic emission and Er 3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000°C. Micro-Raman results indicate that the a - SiO x : H < Er > films are a mixture of two phases, an amorphous SiO x matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a - SiO x : H < Er > films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er 3+ emission. Our study emphasizes the role of a-Si domains on Er 3+ emission in a - SiO x : H < Er > films.

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