Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
Michael L. Reed ◽  
James D. Plummer
Keyword(s):  
Thermal Processing ◽  
Hydrogen Diffusion ◽  
Rapid Thermal Processing ◽  
Kinetic Studies ◽  
Interface State ◽  
Experimental Methodology ◽  
Annealing Behavior ◽  
Promising Tool ◽  
Short Time ◽  
Kinetics Of

ABSTRACTRapid thermal processing is a promising tool for studying the kinetics of interface state annealing and other process phenomena on short time scales. We have studied the decay of interface states with a variety of ambients, temperatures, and oxide thicknesses. Annealing kinetics appear to be controlled by a surface reaction process, and not hydrogen diffusion through the oxide. The annealing behavior depends strongly on temperature but less so on other process parameters. Our experimental methodology for temporal process modeling is discussed.

scholarly journals Rapid Thermal Processing to Enhance Steel Toughness

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
V. K. Judge ◽  
J. G. Speer ◽  
K. D. Clarke ◽  
K. O. Findley ◽  
A. J. Clarke
Keyword(s):  
Mechanical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Manufacturing Processes ◽  
Tempered Martensite ◽  
Short Time ◽  
Rapid Processing ◽  
Transportation Applications ◽  
Quenching And Tempering ◽  
Rapid Tempering

Abstract Quenching and Tempering (Q&T) has been utilized for decades to alter steel mechanical properties, particularly strength and toughness. While tempering typically increases toughness, a well-established phenomenon called tempered martensite embrittlement (TME) is known to occur during conventional Q&T. Here we show that short-time, rapid tempering can overcome TME to produce unprecedented property combinations that cannot be attained by conventional Q&T. Toughness is enhanced over 43% at a strength level of 1.7 GPa and strength is improved over 0.5 GPa at an impact toughness of 30 J. We also show that hardness and the tempering parameter (TP), developed by Holloman and Jaffe in 1945 and ubiquitous within the field, is insufficient for characterizing measured strengths, toughnesses, and microstructural conditions after rapid processing. Rapid tempering by energy-saving manufacturing processes like induction heating creates the opportunity for new Q&T steels for energy, defense, and transportation applications.

Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers

2000 ◽  
Vol 647 ◽  
Author(s):  
Sabina Spiga ◽  
Sandro Ferrari ◽  
Marco Fanciulli ◽  
Bernd Schmidt ◽  
Karl-Heinz Heinig ◽  
...  
Keyword(s):  
Size Distribution ◽  
Thermal Processing ◽  
Cluster Size ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Cluster Size Distribution ◽  
Process Conditions ◽  
Ion Beam Synthesis ◽  
Kinetics Of ◽  
Implantation Fluence

AbstractIn this work we investigate the ion beam synthesis of Sn and Sb clusters in thin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Sn implantation in 85 nm thick SiO2, followed by annealing (800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermal processing (RTP) system, leads to the formation of two cluster bands, near the middle of the SiO2 layer and the Si/SiO2 interface. In addition, big isolated clusters are randomly distributed between the two bands. Cluster-size distribution and cluster-crystallinity are related to implantation fluence and annealing time. Low energy (10-12 keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2) leads to the formation of very uniform cluster-size distribution. Under specific process conditions, only an interface cluster band is observed.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
J. Nulman
Keyword(s):  
Thermal Processing ◽  
Silicon Surface ◽  
Rapid Thermal Processing ◽  
Oxide Growth ◽  
Surface Chemical ◽  
Native Oxides ◽  
Wafer Cleaning ◽  
In Situ Processing ◽  
Kinetics Of

ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.

A Method for Rapid Thermal Annealing of Compound Semiconductors by Cw CO2 Laser Irradiation

1987 ◽  
Vol 92 ◽  
Author(s):  
U. Neta ◽  
V. Richter ◽  
R. Kalish
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Processing Technique ◽  
Absorbing Medium ◽  
Implantation Damage ◽  
Steady State Temperature ◽  
Present Technique ◽  
Simultaneous Heating ◽  
Short Time

ABSTRACTA new Rapid Thermal Processing technique based on heating by irradiation from CO2 laser is presented. It is particularly suitable for thermal treatment of low melting temperature materials such as annealing implantation induced damage in compound semiconductors.Short time heating of the sample is achieved by its contact with a quartz plate heated by photons from a CW CO2 laser. The quartz serves both as an absorbing medium for the radiation and as a proximity cap. Steady state temperature can be obtained by the simultaneous heating of the sample by the laser and its cooling by a jet of N2 gas.The present technique, when applied to ion implanted InSb (TA<450°C, t=10 seconds), leads to removal of the implantation damage which is comparable to that obtained by furnace or flash lamp (Heatpulse™)annealing.

Effectiveness of Thin Film Encapsulants for Reducing Evaporation during Rapid Thermal Processing of GaAs

1986 ◽  
Vol 74 ◽  
Author(s):  
T. E. Haynes ◽  
S. T. Picraux ◽  
W. K. Chu
Keyword(s):  
Thin Film ◽  
Direct Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Kinetic Studies ◽  
Direct Measure ◽  
Temperature Ranges ◽  
Formation Of Cracks ◽  
20 Nm ◽  
Evaporation Mechanism

AbstractA technique is described for direct measurement of evaporation of Ga and As from capped GaAs during RTP. Application of this method to the study of Si, SiO2, and Si3N4 caps with thicknesses of 20 nm to 60 nm provides a direct measure of the temperature ranges for which the caps are able to prevent evaporation during RTP. In addition, kinetic studies of the evaporation at slightly higher temperatures provides information useful for establishing the predominant evaporation mechanism. For the encapsulants studied, these measurements indicate that the observed evaporation is due to formation of cracks in the film during the initial 10 sec of RTP.

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Thermal Effects of Gasses in Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
K. L. Knutson ◽  
S. A. Campbell ◽  
J. D. Leighton
Keyword(s):  
Steady State ◽  
Numerical Model ◽  
Thermal Processing ◽  
Thermal Effects ◽  
Rapid Thermal Processing ◽  
Radiant Intensity ◽  
Steady State Operation ◽  
Temperature Ramps ◽  
Short Time

AbstractA numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation and during short time temperature ramps. It is shown that increasing the radiant intensity at the edge of the wafer reduces stress, compared to a uniform radiant field, in steadystate operation but increases stress during short time temperature ramps.

Kinetics of titanium silicide formation by rapid thermal processing

1989 ◽  
Vol 333 (4-5) ◽  
pp. 569-575 ◽  
Author(s):  
W. Pamler ◽  
K. Wangemann ◽  
W. Bensch ◽  
E. Bußmann ◽  
A. Mitwalsky
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Kinetics Of
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