Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd

1987 ◽  
Vol 91 ◽  
Author(s):  
M. Abdul Awai ◽  
El Hang Lee ◽  
Eric Y. Chan ◽  
R.M. Lum ◽  
J.K. Klingert ◽  
...  
Keyword(s):  
Defect Density ◽  
Schottky Diodes ◽  
Optoelectronic Properties ◽  
Electrical Characteristics ◽  
Doping Density ◽  
Si Substrates ◽  
Diode Ideality Factor ◽  
Gaas Films ◽  
Better Than

ABSTRACTWe report the epitaxial growth of GaAs films on bulk Si, Ge and Ge coated Si substrates by MOCVD. This work is directed at comparing the structural, electrical, optical and optoelectronic properties of the GaAs films grown on these substrates. The quality of the GaAs films was evaluated by a number of techniques including X-ray, TEM, RBS, I-V and C-V. We have also obtained good photoresponse for Au-GaAs/Si, Au-GaAs/Ge and Au-GaAs/Ge/Si Schottky diodes at 0.87μm. We have observed significant differences in defect density, strain, crystalline quality, structural order, doping density depth-profile, dark current, diode ideality factor, photoresponse, inter-diffusion and interface structure among these three different structures. The GaAs/Ge structure exhibited the best structural and electrical characteristics of all. The GaAs/Ge/Si structure showed material properties and Schottky diode performance that are better than those of the GaAs/Si stucture. Although Ge and Si both out-diffuse into GaAs, that the out-diffusion of Si into GaAs appears to cause more degradation in the electrical and optoelectronic properties of GaAs.

STUDY OF ELECTRICAL CHARACTERISTIC FOR 50NM AND 10NM SOI BODY THICKNESS IN MOSFET DEVICE

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
M.N.I.A Aziz ◽  
F. Salehuddin ◽  
A.S.M. Zain ◽  
K.E. Kaharudin
Keyword(s):  
Thin Film ◽  
Electrical Characteristic ◽  
Silicon On Insulator ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Doping Density ◽  
Soi Mosfet ◽  
Buried Oxide ◽  
Soi Technology ◽  
Better Than

Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effect (SCE) problems. The SOI is believed to be capable of suppressing the SCE, thereby improving the overall electrical characteristics of MOSFET device. SCE in SOI MOSFET is heavily influenced by thin film thickness, thin-film doping density and buried oxide (BOX) thickness. This paper will analyze the effect of BOX towards SOI MOSFET device. The 50nm and 10nm thickness of buried oxide in SOI MOSFET was developed by using SILVACO TCAD tools, specifically known as Athena and Atlas modules. From the observation, the electrical characteristic of 100nm thickness is slightly better than 50nm and 10nm. It is observed that the value drive current of 10nm and 100nm thickness SOI MOSFET was 6.9% and 11% lower than 50nm respectively, but the overall 50nm is superior. However, the electrical characteristics of 10nm SOI MOSFET are still closer and within the range of ITRS 2013 prediction.

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 230-233
Author(s):  
Yukimune Watanabe ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Diffusion Mechanism ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Process Conditions ◽  
Heteroepitaxial Growth ◽  
Crystal Axis ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Better Than

The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10-3 Pa or 7.8 × 10-2 Pa in this research. Under the relatively low pressure of 7.8 × 10-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.

Material Characterization of Epitaxial GaAs and Ge Films on (100) Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
M. Abdul Awal ◽  
El Hang Lee ◽  
G. L. Koos ◽  
E. Y. Chan ◽  
G. K. Celler ◽  
...  
Keyword(s):  
Material Characterization ◽  
Defect Density ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Exponential Decrease ◽  
Gaas Films

ABSTRACTWe report some results on the chemical, structural and electrical characterization of Ge and GaAs films, grown on Si (100) substrates by electron-beam evaporation and MOCVD, respectively. Good quality Ge films have been obtained at 700°C substrate temperature at a growth rate of 5 nm/sec in 5 × 10−7 torr. Similarly, good GaAs films were obtained at 650°C and at 0.3 nm/sec. RBS data for GaAs films (1.1 μm) show Xmin approaching 3.5%, and Ge films (1.5 μm) around 3.6%. Photoluminescence of the same films show peaks around 852 nm with FWHM of 14 meV. Cross-sectional TEM and etching show a near-exponential decrease in defect density away from the Ge/Si interface. Detailed characterization results of the S-R, I-V, C-V, and X-ray studies are also described.

scholarly journals New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5348
Author(s):  
Francesco La Via ◽  
Massimo Zimbone ◽  
Corrado Bongiorno ◽  
Antonino La Magna ◽  
Giuseppe Fisicaro ◽  
...  
Keyword(s):  
Defect Density ◽  
Growth Parameters ◽  
Electrical Characteristics ◽  
Research Activity ◽  
Material Defects ◽  
Bulk Growth ◽  
New Approaches ◽  
High Level ◽  
Cubic Silicon Carbide

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

scholarly journals Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber
Keyword(s):  
Thermal Cycling ◽  
Defect Density ◽  
Structural Quality ◽  
High Quality ◽  
Strained Layer ◽  
Patterned Growth ◽  
Si Substrates ◽  
Strained Layer Superlattices

ABSTRACTIn this paper, the fundamental mechanisms of procedures improving the structural quality of GaAs grown on Si are discussed. Patterned growth, strained layer superlattices and proper thermal cycling are promising approaches to achieve a high quality of GaAs layers grown on Si substrates.

The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates

1994 ◽  
Vol 358 ◽  
Author(s):  
M. Albrecht ◽  
B. Steiner ◽  
Th. Bergmann ◽  
A. Voigt ◽  
W. Dorsch ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Thin Layers ◽  
Induced Current ◽  
Si Substrates ◽  
Transmission Electron ◽  
Current Transmission ◽  
Electron Beam Induced Current

ABSTRACTWe investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We observe a reduced recombination strength of dislocations and small angle grain boundaries, i.e. an improved electrical quality of the epitaxial layer compared to the substrate. The improved quality can be attributed (i) to an altered structure of grain boundaries and dislocations and (ii) to a reduced defect density in the epitaxial layer.

Growth and Characterization of GaAs-Based Heterostructures on Si By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
K. T. Short ◽  
K. S. Jones ◽  
S. M. Vernon ◽  
...  
Keyword(s):  
Surface Quality ◽  
Laser Annealing ◽  
Defect Density ◽  
Crystalline Quality ◽  
Si Substrates ◽  
Gaas On Si ◽  
Different Types

AbstractAbstract: Several different types of GaAs-AlGaAs heterostructures were grown on Si substrates by MOCVD. The defect density in as-grown samples (~108cm−2) was similar to that of GaAs layers grown directly on Si, and the crystalline quality of the material was observed to improve slightly with post-growth annealing at 900°C. We examined the diffusion of both Si and Zn dopants during this type of annealing and found only a small amount of redistribution of both species. Laser annealing of GaAs-on-Si was also examined as a method of reducing the defect density in the material - we observed substantial improvements in surface quality, but no change in sub-surface crystalline quality.

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