The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates

1994 ◽  
Vol 358 ◽  
Author(s):  
M. Albrecht ◽  
B. Steiner ◽  
Th. Bergmann ◽  
A. Voigt ◽  
W. Dorsch ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Thin Layers ◽  
Induced Current ◽  
Si Substrates ◽  
Transmission Electron ◽  
Current Transmission ◽  
Electron Beam Induced Current

ABSTRACTWe investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We observe a reduced recombination strength of dislocations and small angle grain boundaries, i.e. an improved electrical quality of the epitaxial layer compared to the substrate. The improved quality can be attributed (i) to an altered structure of grain boundaries and dislocations and (ii) to a reduced defect density in the epitaxial layer.

Reduction of Defect Density in Heteroepitaxial GexSi1-x Grown on Patterned Si Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
E.A. Fitzgerald ◽  
Y.-H. Xie ◽  
J. Michel ◽  
P.E. Freeland ◽  
B.E. Weir
Keyword(s):  
Defect Density ◽  
Threading Dislocation ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Electron Beam Induced Current ◽  
Molecular Beam Epitaxial Growth

AbstractWe have investigated the molecular beam epitaxial growth of GexSi1-x on small growth areas patterned in Si substrates. Electron beam induced current, etch-pit density measurements, transmission electron microscopy, and photoluminescence were used to compare dislocation densities in GexSi1-x on patterned and unpattemed substrates. We find a dramatic reduction in both misfit and threading dislocation densities for the patterned substrate growth. Our results also show that dislocation introduction is dominated by heterogeneous nucleation.

Grain Boundaries in Multicrystalline Si

2009 ◽  
Vol 156-158 ◽  
pp. 19-26 ◽  
Author(s):  
Jun Chen ◽  
Bin Chen ◽  
Woong Lee ◽  
Masayuki Fukuzawa ◽  
Masayoshi Yamada ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Grain Boundaries ◽  
Dark Field ◽  
Contamination Level ◽  
Induced Current ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Beam Induced Current ◽  
Fe Impurity

We report the electrical, structural and mechanical properties of grain boundaries (GBs) in multicrystalline Si (mc-Si) based on electron-beam-induced current (EBIC), transmission electron microscope (TEM), and scanning infrared polariscope (SIRP) characterizations. The recombination activities of GBs are clearly classified with respect to GB character and Fe contamination level. The decoration of Fe impurity at boundary has been approved by annular dark field (ADF) imaging in TEM. Finally, the distribution of residual strain around GBs, and the correlations between strain and electrical properties are discussed.

Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate

2005 ◽  
Vol 483-485 ◽  
pp. 221-224 ◽  
Author(s):  
A. Shoji ◽  
Mitsutaka Nakamura ◽  
K. Mitikami ◽  
Toshiyuki Isshiki ◽  
Satoru Ohshima ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Si Substrate ◽  
Electron Microscopic ◽  
Grown Layer ◽  
Si Substrates ◽  
High Defect Density ◽  
Transmission Electron ◽  
Transmission Electron Microscopic

The pendeo epitaxial growth has been applied for the growth of 3C-SiC on (001) Si substrates. This growth was performed by VPE using hexamethyldisilane (HMDS) as a source gas. To characterize the crystallinity of the seed 3C-SiC and the pendeo epitaxial layer, the high resolution transmission electron microscopic (HRTEM) analysis was carried out. In the vertically grown layer on the seed 3C-SiC, the high-defect-density regions were observed. On the contrary, the low-defect-density regions were observed in the laterally grown layer. It was revealed from the TEM observations that lattice information can be transferred through the seed 3C-SiC while defects can be prevented from propagating into the epitaxial layer due to the presence of the air gap.

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si

2012 ◽  
Vol 725 ◽  
pp. 157-160 ◽  
Author(s):  
Yoshiji Miyamura ◽  
Hirofumi Harada ◽  
Shun Ito ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Small Angle ◽  
Induced Current ◽  
Edge Type ◽  
Screw Dislocations ◽  
Transmission Electron ◽  
Electron Beam Induced Current ◽  
Edge Dislocations ◽  
Electrical Activities

Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified in “general” and “special” by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using electron beam induced current (EBIC) and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type and 60 deg / screw dislocations. The fraction of edge dislocation in special SA-GB was higher than that of general one, which suggests that strong electrical activity is mainly originated in edge dislocations.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

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