Effects of Sn and Zn Seed Layers on the Electrical Characteristics of Pd/ZnO Thin-Film Schottky Diodes Grown on n-Si Substrates

2014 ◽  
Vol 35 (9) ◽  
pp. 945-947 ◽  
Author(s):  
Divya Somvanshi ◽  
Satyabrata Jit
Keyword(s):  
Thin Film ◽  
Schottky Diodes ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Seed Layers

Microwave ZnO thin film transistors on Si substrates

2009 ◽  
Author(s):  
Burhan Bayraktaroglu ◽  
Kevin Leedy ◽  
Robert Neidhard
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Si Substrates

scholarly journals Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

2016 ◽  
Vol 56 ◽  
pp. 29-33 ◽  
Author(s):  
M. Estrada ◽  
M. Rivas ◽  
I. Garduño ◽  
F. Avila-Herrera ◽  
A. Cerdeira ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics

Electrical Properties of Homoepitaxial Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Diamond Surface ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Process Formation ◽  
Conductive State

ABSTRACTWe describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1361-1367 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Surface ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Dielectric Thin Film ◽  
Si Substrates ◽  
Columnar Grain

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

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