scholarly journals Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

2005 ◽  
Vol 864 ◽  
Author(s):  
Q. Wang ◽  
Manmohan Daggubati ◽  
Hossein Paravi ◽  
Rong Yu ◽  
Xiao Feng Zhang
Keyword(s):  
Habit Plane ◽  
Interfacial Energy ◽  
Silicon Substrate ◽  
Annealing Process ◽  
Silicon Wafers ◽  
Back Surface ◽  
Interstitial Oxygen ◽  
Surface Conditions ◽  
Czochralski Silicon ◽  
Polysilicon Layer

AbstractThe precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.

Effect of Interstitial Oxygen on Formation of Amorphous SiOxLayerin Directly Bonded Czochralski Silicon Wafers

1993 ◽  
Vol 32 (Part 1, No. 12A) ◽  
pp. 5463-5467 ◽  
Author(s):  
Shun-ichiro Ishigami ◽  
Yukio Kawai ◽  
Hisashi Furuya ◽  
Takayuki Shingyouji ◽  
Yuichi Saitoh
Keyword(s):  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Czochralski Silicon

Interstitial oxygen gettering in Czochralski silicon wafers

1977 ◽  
Vol 31 (5) ◽  
pp. 343-345 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Czochralski Silicon

Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 211-216 ◽  
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
V.D. Akhmetov ◽  
Andreas Sattler ◽  
D. Kot ◽  
...  
Keyword(s):  
Ab Initio ◽  
Rate Equation ◽  
Ab Initio Calculation ◽  
Equation Modeling ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Early Stages ◽  
Highly Sensitive ◽  
Defect Species ◽  
Ftir Investigation

The results of highly sensitive FTIR investigation, ab initio calculations and rate equation modeling of the early stages of oxide precipitation are compared. The attachment of interstitial oxygen to VOn is energetically more favorable than the attachment to On for n  6. For higher n the energy gain is comparable. The point defect species which were detected by highly sensitive FTIR in high oxygen Czochralski silicon wafers are O1, O2, O3, and VO4. Rate equation modeling for I, V, On and VOn with n = (1..4) also yields O1, O2, O3 to appear with decreasing concentration and VO4 as that one of the VOn species which would appear in the highest concentration after RTA.

Gettering Processes for Sub-Micron VLSI

1986 ◽  
Vol 76 ◽  
Author(s):  
John Andrews
Keyword(s):  
Defect Density ◽  
Back Surface ◽  
Dislocation Network ◽  
Published Data ◽  
Interstitial Oxygen ◽  
Supersaturation Ratio ◽  
Zone Formation ◽  
Wide Range ◽  
Dry Oxidation ◽  
P Diffusion

ABSTRACTGettering by the dislocation network caused by P-diffusion into the back surface of Si wafers at 950° C for 1 hr. is often used for VLSI. However, transistors with sub-micron gates are jeopardized at 950°C because of possible source-drain punch through by lateral P-diffusion. The temperature dependence of gettering by P-diffusion has been investigated at 950, 900, and 850°C. Gettering by P-diffusion was found to be marginal at 900°C and totally ineffective at 850°C.Recently published data on the solubility and diffusivity of interstitial oxygen in Czochralski-grown Si has been used to develop a simple out-diffusion model for denuded zone formation during thermal oxidation. Comparison with experimental observations on samples with high interstitial SiO2 concentration [Oi]0, exposed to dry oxidation at 1100° C for various times up to 8 hrs. and followed by 24 hr. anneals in N2 at 700°C and 1050°C, reveal that SiO2 precipitation occurs when the supersaturation ratio exceeds 4.7. The model implies an optimum denuding temperature near 100° C for a dry oxidation time of 4 hrs. The bulk defect density was also observed to decrease more than a factor of 5 as the denuding time was increased from 0 to 8 hrs.Intrinsic gettering by SiO2 precipitates in Czochralski-grown silicon has been evaluated over a wide range of initial interstitial oxygen concentrations 15 < [Oi]0 < 22 ppma with and without a HI-LO-HI pre-process annealing cycle. Among samples of approximately 100 p-n junctions per wafer, reductions of 1–3 orders of magnitude in reverse leakage at 5 volts were achieved in the worst 10% of 500 μm square devices on wafers that were exposed to the HI-LO-HI heat treatment. Intrinsic gettering is most effective when [Oi]0 22 ppma, but leakage reduction among the worst diodes is achieved at the expense of a 2 or 3-fold increase in median leakage.

Optical characteristics of porous silicon photonic crystals prepared on the back surface of silicon wafers

Optik ◽  
2020 ◽  
Vol 201 ◽  
pp. 163486
Author(s):  
Furu Zhong ◽  
Jiaqing Mo ◽  
Yangjun Li ◽  
Bin Sun ◽  
Zhaofeng Wu
Keyword(s):  
Porous Silicon ◽  
Photonic Crystals ◽  
Silicon Wafers ◽  
Optical Characteristics ◽  
Back Surface ◽  
Silicon Photonic
Sign in / Sign up

Export Citation Format

Share Document