High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers

2006 ◽  
Vol 88 (15) ◽  
pp. 154107 ◽  
Author(s):  
Q. Wang ◽  
Ihsiu Ho
Keyword(s):  
High Temperature ◽  
Oxygen Diffusion ◽  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Boron Doped

Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

1999 ◽  
Vol 74 (24) ◽  
pp. 3648-3650 ◽  
Author(s):  
Toshiaki Ono ◽  
George A. Rozgonyi ◽  
Eiichi Asayama ◽  
Hiroshi Horie ◽  
Hideki Tsuya ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Boron Doped

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 ◽  
Vol 142 (9) ◽  
pp. 3189-3192 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Czochralski Silicon

scholarly journals Kinetic Monte Carlo Simulation of Oxygen Diffusion in Ytterbium Disilicate

MRS Advances ◽  
2016 ◽  
Vol 1 (17) ◽  
pp. 1203-1208 ◽  
Author(s):  
Brian S. Good
Keyword(s):  
Monte Carlo ◽  
High Temperature ◽  
Oxygen Diffusion ◽  
Density Functional ◽  
Defect Formation ◽  
Kinetic Monte Carlo ◽  
Interstitial Oxygen ◽  
Temperature Oxidation ◽  
Electron Volt ◽  
Formation Energies

ABSTRACTYtterbium disilicate is of interest as a potential environmental barrier coating for aerospace applications, notably for use in next generation jet turbine engines. In such applications, the transport of oxygen and water vapor through these coatings to the ceramic substrate is undesirable if high temperature oxidation is to be avoided. In an effort to understand the diffusion process in these materials, we have performed kinetic Monte Carlo simulations of vacancy-mediated and interstitial oxygen diffusion in Ytterbium disilicate. Oxygen vacancy and interstitial site energies, vacancy and interstitial formation energies, and migration barrier energies were computed using Density Functional Theory. We have found that, in the case of vacancy-mediated diffusion, many potential diffusion paths involve large barrier energies, but some paths have barrier energies smaller than one electron volt. However, computed vacancy formation energies suggest that the intrinsic vacancy concentration is small. In the case of interstitial diffusion, migration barrier energies are typically around one electron volt, but the interstitial defect formation energies are positive, with the result that the disilicate is unlikely to exhibit experience significant oxygen permeability except at very high temperature.

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

scholarly journals Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

2005 ◽  
Vol 864 ◽  
Author(s):  
Q. Wang ◽  
Manmohan Daggubati ◽  
Hossein Paravi ◽  
Rong Yu ◽  
Xiao Feng Zhang
Keyword(s):  
Habit Plane ◽  
Interfacial Energy ◽  
Silicon Substrate ◽  
Annealing Process ◽  
Silicon Wafers ◽  
Back Surface ◽  
Interstitial Oxygen ◽  
Surface Conditions ◽  
Czochralski Silicon ◽  
Polysilicon Layer

AbstractThe precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

1998 ◽  
Vol 72 (2) ◽  
pp. 223-225 ◽  
Author(s):  
G. Kissinger ◽  
G. Morgenstern ◽  
J. Vanhellemont ◽  
D. Gräf ◽  
U. Lambert ◽  
...  
Keyword(s):  
High Temperature ◽  
Internal Oxidation ◽  
Silicon Wafers ◽  
Czochralski Silicon

Internal Dissolution of Buried Oxide in SOI Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 113-118 ◽  
Author(s):  
Oleg Kononchuk ◽  
Francois Boedt ◽  
Frederic Allibert
Keyword(s):  
High Temperature ◽  
Dissolution Rate ◽  
Thermodynamic Model ◽  
Oxygen Diffusion ◽  
Interstitial Oxygen ◽  
Free Atmosphere ◽  
Buried Oxide ◽  
Parabolic Law ◽  
High Temperature Anneal ◽  
Kinetics Of

High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching. Dissolution rate is determined by interstitial oxygen diffusion through the top Si layer and evaporation from the top Si surface in the form of SiO. It has been observed that kinetics of the process follows linear-parabolic law. Simple thermodynamic model is proposed, which explains observed dependences on temperature and top Si layer thickness.

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

1996 ◽  
Vol 36 (1-3) ◽  
pp. 50-54 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon
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