Interstitial oxygen gettering in Czochralski silicon wafers

1977 ◽  
Vol 31 (5) ◽  
pp. 343-345 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Czochralski Silicon

scholarly journals Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

2005 ◽  
Vol 864 ◽  
Author(s):  
Q. Wang ◽  
Manmohan Daggubati ◽  
Hossein Paravi ◽  
Rong Yu ◽  
Xiao Feng Zhang
Keyword(s):  
Habit Plane ◽  
Interfacial Energy ◽  
Silicon Substrate ◽  
Annealing Process ◽  
Silicon Wafers ◽  
Back Surface ◽  
Interstitial Oxygen ◽  
Surface Conditions ◽  
Czochralski Silicon ◽  
Polysilicon Layer

AbstractThe precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.

Effect of Interstitial Oxygen on Formation of Amorphous SiOxLayerin Directly Bonded Czochralski Silicon Wafers

1993 ◽  
Vol 32 (Part 1, No. 12A) ◽  
pp. 5463-5467 ◽  
Author(s):  
Shun-ichiro Ishigami ◽  
Yukio Kawai ◽  
Hisashi Furuya ◽  
Takayuki Shingyouji ◽  
Yuichi Saitoh
Keyword(s):  
Silicon Wafers ◽  
Interstitial Oxygen ◽  
Czochralski Silicon

Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 211-216 ◽  
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
V.D. Akhmetov ◽  
Andreas Sattler ◽  
D. Kot ◽  
...  
Keyword(s):  
Ab Initio ◽  
Rate Equation ◽  
Ab Initio Calculation ◽  
Equation Modeling ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Early Stages ◽  
Highly Sensitive ◽  
Defect Species ◽  
Ftir Investigation

The results of highly sensitive FTIR investigation, ab initio calculations and rate equation modeling of the early stages of oxide precipitation are compared. The attachment of interstitial oxygen to VOn is energetically more favorable than the attachment to On for n  6. For higher n the energy gain is comparable. The point defect species which were detected by highly sensitive FTIR in high oxygen Czochralski silicon wafers are O1, O2, O3, and VO4. Rate equation modeling for I, V, On and VOn with n = (1..4) also yields O1, O2, O3 to appear with decreasing concentration and VO4 as that one of the VOn species which would appear in the highest concentration after RTA.

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Gettering of surface and bulk impurities in Czochralski silicon wafers

1978 ◽  
Vol 32 (11) ◽  
pp. 747-749 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Czochralski Silicon
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