Integration of a Polymer Etch Stop Layer in a Porous Low K MLM Structure

2005 ◽  
Vol 863 ◽  
Author(s):  
Gregory C. Smith ◽  
Neil Henis ◽  
Richard McGowan ◽  
Brian White ◽  
Matthias Kraatz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
Effective Dielectric Constant ◽  
Metal Structures ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Low K

AbstractTwo level metal structures were fabricated to test the efficacy of using an organic low K etch stop layer (OESL) in order to lower the effective dielectric constant for intralayer capacitance. The organic etch stop layer's intrinsic capacitance of 3.3 compares with that of silicon carbide (∼ 5) which constitutes the control of the experiment. This reduction represents a reduction of effective dielectric constant for the stack of about 10% to about 3.0. The process was optimized so as to achieve yield of via chains of a million 130 nm diameter vias, and effective K was measured. The target of 3.0 was achieved using this process. Interpenetration of the organic etch stop with the MSQ porous low K material was observed.

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Grill ◽  
V. Patel ◽  
K.L. Saenger ◽  
C. Jahnes ◽  
S.A. Cohen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Internal Stresses ◽  
Diamondlike Carbon ◽  
Potential Applications ◽  
Etch Stop ◽  
Si Content ◽  
Low K ◽  
Thermal Stability Of

AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3 and 2.7 by changing the deposition conditions. The thermal stability of these DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. While DLC films having dielectric constants k>3.3 appeared to be stable to anneals of 4 hours at 400 °C in He, a film having a dielectric constant of 2.7 was not, losing more than half of its thickness upon exposure to the same anneal. The stresses in the DLC films were found to decrease with decreasing dielectric constant, from 700 MPa to about 250 MPa. FDLC films characterized by a dielectric constant of about 2.8 were found to have similar thermal stability as DLC films with k >3.3. The thermally stable FDLC films have internal stresses <300 MPa and are thus promising candidates as a low-k ILD.For the range of Si contents examined (0-9% C replacement by Si), SiDLC films with a Si content of around 5% appear to provide an effective etch-stop for oxygen RIE of DLC or FDLC films, while retaining desirable electrical characteristics. These films showed a steady state DLC/SiDLC etch rate ratio of about 17, and a dielectric constant only about 30% higher than the 3.3 of DLC.

High Density Plasma Silicon Carbide as a Barrier/Etch Stop Film for Copper Damascene Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Hichem M'Saad ◽  
Seon-Mee Cho ◽  
Manoj Vellaikal ◽  
Zhuang Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Nitride ◽  
Barrier Properties ◽  
Effective Dielectric Constant ◽  
Dielectric Barrier ◽  
Copper Diffusion ◽  
Etch Stop ◽  
Damascene Interconnects ◽  
Density Plasma

AbstractA low κ dielectric barrier/etch stop has been developed for use in copper damascene application. The film is deposited using methane, silane and argon as precursors in a HDP-CVD reactor. The film has a dielectric constant of 4.2 which is lower than the dielectric constant of conventional SiC or plasma silicon nitride (>7). Film characterization including physical, electrical, adhesion to ILD films, etch selectivity, and copper diffusion barrier properties show that this film is a better barrier than silicon nitride for low κ copper damascene interconnects. This film consists of a refractive index in the range of 1.7 to 1.8, a compressive stress of 1.0-1.5×109 dynes/cm2, and a leakage current of 5.0×10−10 A/cm2 at 1 MV/cm. When integrated in-situ with HDP-FSG, an effective dielectric constant of 3.5 can be achieved.

Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
John Pellerin ◽  
Robert Fox ◽  
Huei-Min Ho
Keyword(s):  
Dielectric Constant ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Metal Structures ◽  
Single Level ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Low K

AbstractThis paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

Silver Damascene Process with Cap Layer

2002 ◽  
Vol 732 ◽  
Author(s):  
Masahiro Ota ◽  
Manabu Tsujimura ◽  
Hiroaki Inoue ◽  
Hirokazu Ezawa ◽  
Masahiro Miyata
Keyword(s):  
Dielectric Constant ◽  
Noble Metals ◽  
Effective Dielectric Constant ◽  
New Materials ◽  
Technology Roadmap ◽  
Cap Layer ◽  
Planarization Process ◽  
High K Materials ◽  
Cu Interconnect ◽  
Low K

AbstractDevelopment of semiconductors has proceeded according to broad frameworks such as the International Technology Roadmap for Semiconductors (ITRS). A key development in semiconductor technology involves the adoption of several new materials, such as Cu, low-k and high-k materials, and noble metals in capacitors, transistors, and/or interconnects. These developments will likely lead to wider application of the planarization process to new processes and new materials, and call for even stricter planarization performance requirements. One example involves planarizing Ag interconnects with an optimal cap layer configuration for reducing RC delays. The Cu interconnect process is currently used to reduce wire resistivity. One material that has been proposed as a successor to Cu is Ag. Many low-k materials have been developed with the goal of reducing dielectric constant (k). However, damascene design and matters such as cap layer configuration are also important considerations in reducing the effective dielectric constant (k eff). Our report herein begins by proposing Ni-B deposited by electroless plating as a candidate cap material, due to the following characteristics: (1) it offers good selectivity for Ag interconnects; (2) it provides good barrier effects through thermal processes; and (3) it provides good controllability of deposition rates. Next, we report that Ag damascene with Ni-B cap layer can be realized through electroplating and polishing of Ag interconnects. Although Ag polishing technologies are currently not fully developed, we suggest that they may nevertheless be successfully applied to polish Ag.

Low-Dielectric Constant SiO(F,C) Films for ULSI Interconnections Prepared by CF4 Plasma Ion Implantation

1998 ◽  
Vol 511 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan ◽  
Paul K. Chu
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Breakdown Strength ◽  
Plasma Reactor ◽  
Effective Dielectric Constant ◽  
Electrical Field ◽  
Low Dielectric ◽  
Double Layer Model ◽  
Doping Technique ◽  
Low K

ABSTRACTPlasma ion implantation (PII) doping technique has been utilized to prepare a new lowdielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PH doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF4 PII could be beneficial to planarization and gap filling of dielectric interlayer.

Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer

2002 ◽  
Vol 41 (Part 2, No. 4A) ◽  
pp. L425-L427 ◽  
Author(s):  
Michinobu Mizumura ◽  
Ryouji Fukuyama ◽  
Yutaka Oomoto
Keyword(s):  
Dielectric Constant ◽  
Dry Etching ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Etch Stop ◽  
Etch Stop Layer

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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