Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Grill ◽  
V. Patel ◽  
K.L. Saenger ◽  
C. Jahnes ◽  
S.A. Cohen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Internal Stresses ◽  
Diamondlike Carbon ◽  
Potential Applications ◽  
Etch Stop ◽  
Si Content ◽  
Low K ◽  
Thermal Stability Of

AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3 and 2.7 by changing the deposition conditions. The thermal stability of these DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. While DLC films having dielectric constants k>3.3 appeared to be stable to anneals of 4 hours at 400 °C in He, a film having a dielectric constant of 2.7 was not, losing more than half of its thickness upon exposure to the same anneal. The stresses in the DLC films were found to decrease with decreasing dielectric constant, from 700 MPa to about 250 MPa. FDLC films characterized by a dielectric constant of about 2.8 were found to have similar thermal stability as DLC films with k >3.3. The thermally stable FDLC films have internal stresses <300 MPa and are thus promising candidates as a low-k ILD.For the range of Si contents examined (0-9% C replacement by Si), SiDLC films with a Si content of around 5% appear to provide an effective etch-stop for oxygen RIE of DLC or FDLC films, while retaining desirable electrical characteristics. These films showed a steady state DLC/SiDLC etch rate ratio of about 17, and a dielectric constant only about 30% higher than the 3.3 of DLC.

A Correlation Study of Thermal Stability on Porous Low k

2002 ◽  
Vol 716 ◽  
Author(s):  
Y.F. Chow ◽  
T.H. Foo ◽  
L. Shen ◽  
J.S. Pan ◽  
A.Y. Du ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Annealing Temperature ◽  
Correlation Study ◽  
Film Properties ◽  
Unannealed Sample ◽  
Nano Indentation ◽  
Low K ◽  
Thermal Stability Of

AbstractThe thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.

scholarly journals Extraordinary thermal behavior of graphene oxide in air for electrode applications

2021 ◽  
Author(s):  
Joong Tark Han ◽  
Joon Young Cho ◽  
Jeong Hoon Kim
Keyword(s):  
Thermal Stability ◽  
Graphene Oxide ◽  
Physical Properties ◽  
Thermal Behavior ◽  
Stability Of Solution ◽  
Exfoliated Graphene ◽  
Potential Applications ◽  
Thermal Stability Of

The thermal stability of solution-exfoliated graphene oxide (GO) in air is one of the most important physical properties influencing its potential applications. To date, majority of the GO prepared by...

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

scholarly journals Adamantane-Modified Graphene Oxide for Cyanate Ester Resin Composites with Improved Properties

2019 ◽  
Vol 9 (5) ◽  
pp. 881 ◽  
Author(s):  
Zhicong Miao ◽  
Juntao Shi ◽  
Tianjiao Liu ◽  
Peng Li ◽  
Zhiqiang Su ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Graphene Oxide ◽  
Interfacial Polarization ◽  
Cyanate Ester ◽  
Scanning Calorimetry ◽  
Modified Graphene Oxide ◽  
Potential Applications ◽  
Cure Temperature ◽  
Modified Graphene

The conjugation of graphene and polymers has attracted great attention for the fabrication of functional hybrid nanomaterials. Here, we demonstrate the modification of graphene oxide (GO) with adamantane (AMT) through the diimide-activated amidation reaction. The modification of GO with AMT improves the dispersion and decreases the interfacial polarization of GO, causing a lower dielectric constant for the fabricated GO/AMT hybrid materials. The structures of GO/AMT were studied by Fourier transform infrared spectroscopy and Raman spectroscopy. Furthermore, the mechanical properties, thermal stability, and dielectric constant of GO/AMT composites were measured at a low cured temperature using various techniques, such as differential scanning calorimetry, thermogravimetric analysis, and dynamic mechanical thermal analysis. It was found that the synthesized GO/AMT materials with different contents were blended into cyanate ester (CE) resins, resulting in a lower cure temperature, smaller dielectric constant, higher thermal stability, and stronger water resistance. It is expected that this novel GO/AMT-CE material will have potential applications for replacing traditional thermosetting resins.

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

Thermal stability of diamondlike carbon films

1996 ◽  
Vol 80 (5) ◽  
pp. 3068-3075 ◽  
Author(s):  
Z. L. Akkerman ◽  
H. Efstathiadis ◽  
F. W. Smith
Keyword(s):  
Thermal Stability ◽  
Carbon Films ◽  
Diamondlike Carbon ◽  
Thermal Stability Of

Ion Induced Mixing of AlGaAs/GaAs Superlattices

1987 ◽  
Vol 93 ◽  
Author(s):  
T. Venkatesan ◽  
S. A. Schwarz ◽  
P. Mei ◽  
H. W. Yoon
Keyword(s):  
Thermal Stability ◽  
Process Parameters ◽  
Alloy Composition ◽  
Device Fabrication ◽  
Crystalline Quality ◽  
Good Crystalline Quality ◽  
Potential Applications ◽  
Mixed Layers ◽  
High Degree ◽  
Thermal Stability Of

ABSTRACTSubsequent to the implantation of certain ions, the thermal stability of AlGaAs/GaAs superlattices can be reduced, enabling mixing of the layers at temperatures where they would otherwise be stable. The mixed layers have intermediate alloy composition and are of good crystalline quality. As a result this process is of great value in device fabrication where a high degree of vertical and lateral bandgap control is desirable. This paper reviews our work in understanding the mechanism of diffusion, its dependence on varilous process parameters, and potential applications in device fabrication.

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Thermal stability of low dielectric constant porous silica films

2005 ◽  
Vol 87 (26) ◽  
pp. 262909 ◽  
Author(s):  
L. Esposito ◽  
G. Ottaviani ◽  
E. Carollo ◽  
M. Bacchetta
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Silica Films ◽  
Low Dielectric ◽  
Thermal Stability Of
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