Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

An SEM Investigation of Annealing Encapsulants for SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Engine Oil ◽  
Robust Performance ◽  
Chemical Inertness ◽  
High Breakdown Electric Field ◽  
Sem Investigation ◽  
Temperature Applications

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

2003 ◽  
Vol 47 (8) ◽  
pp. 1345-1350 ◽  
Author(s):  
Jihyun Kim ◽  
F. Ren ◽  
A.G. Baca ◽  
R.D. Briggs ◽  
S.J. Pearton
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Schottky Contacts ◽  
Thermal Stability Of

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

2018 ◽  
Vol 6 (44) ◽  
pp. 12079-12085 ◽  
Author(s):  
Anna Regoutz ◽  
Gregor Pobegen ◽  
Thomas Aichinger
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Interface Chemistry ◽  
X Ray ◽  
Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

Refractory Silicide Schottky Contacts To Gaas

1985 ◽  
Vol 54 ◽  
Author(s):  
N. Yokoyama ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
H. Nishi
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Refractory Metal ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
X Ray

ABSTRACTRefractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces. We emphasize the fact that W5Si3/GaAs contacts have extremely stable electrical properties even after annealing at temperatures up to 850°C. Crystallographical properties of the W5S3 film on GaAs, investigated by x-ray and TEM measurement techiques, are also covered. We found that the Schottky electrical characteristics are not affected by whether the film is amorphous or crystalline.

scholarly journals Estudo dos efeitos da dose total ionizante (TID) em um transistor comercial de lata mobilidade de elétrons (HEMT), baseado na hetroestrutura AIGaN/GaN

2020 ◽  
Author(s):  
◽  
A. C. Vilas Bôas
Keyword(s):  
High Electron Mobility Transistor ◽  
Harsh Environments ◽  
Particle Accelerators ◽  
High Electron ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
X Ray ◽  
Gan Hemt ◽  
Gan Heterostructure ◽  
Temperature Test

This work presents a systematic study on a commercial high electron mobility transistor based on the AlGaN / GaN heterostructure (GaN HEMT). The study evaluates its robustness to different radiation doses, more specifically, its robustness to the effects of the total ionizing dose (TID) irradiated from an X-ray source with an effective energy of 10 keV. The accumulated dose varies from up to 350 krad (Si). Therefore, for this purpose, three tests were performed on the commercial transistor, GS61008T. First, the acquisition of parameters: threshold voltage (VTH), Transconductance (gm), off current (Ioff) and sub-threshold slope (S) before, during and after exposure to radiation. Then, the switching test, where the rise (tr) and fall (tf) times were aquired, pre and post irradiation, in two diffrent frequency, 100 Hz and 100 kHz. Moreover, the temperature test, where the sample varied from 223 K (-50ºC) to 348 K (75 ºC) to evaluate its robustness for the temperature variation after having accumulated 350 krad (Si). In addition, for a better understanding of the effects of TID on the sample, all tests were performed in two different polarization modes. The on mode (VGS = 3 V and VDS = 0 V), and the off mode (VGS = VDS = 0 V). The characteristic electrical parameters of the transistor were extracted using the characteristic curves IDxVD, IDxVG and IDxt. Curves, that were obtained using National Instrument’s PXI, with programmable sources and an X-ray diffractometer. The results showed that for the devices analyzed, for this GaN COTS the effects resulting from ionizing radiation (TID), with doses up to 350 krad (Si), are minimal, and also showed a quick and effective recovery of their electrical characteristics after annealing at room temperature, especially when irradiated polarized at on mode. Therefore, indicating that they are good candidates for use in harsh environments, as is the case of aerospace environments, particle accelerators environments and nuclear reactors

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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