Refractory Silicide Schottky Contacts To Gaas

1985 ◽  
Vol 54 ◽  
Author(s):  
N. Yokoyama ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
H. Nishi
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Refractory Metal ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
X Ray

ABSTRACTRefractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces. We emphasize the fact that W5Si3/GaAs contacts have extremely stable electrical properties even after annealing at temperatures up to 850°C. Crystallographical properties of the W5S3 film on GaAs, investigated by x-ray and TEM measurement techiques, are also covered. We found that the Schottky electrical characteristics are not affected by whether the film is amorphous or crystalline.

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Effects of Donor Doping on Microstructure and Electrical Properties of Bismuth Layer-Structured Bi4Ti3O12 Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 259-262 ◽  
Author(s):  
Lina Zhang ◽  
Su Chuan Zhao ◽  
Liao Ying Zheng ◽  
Guo Rong Li ◽  
Qing Rui Yin
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Suitable Candidate ◽  
X Ray ◽  
Donor Doping ◽  
Diffraction Patterns

A study was conducted on the effects of donor dopants, Nb2O5 and WO3, on microstructure and electric properties of Bi4Ti3O12 (BIT) ceramics. X-ray diffraction patterns of the materials showed a single orthorhombic phase structure. The microstructure results revealed the appearance of plate-like grain. The donor doping decreased the conductivity of BIT by as much as 3 orders of magnitude. The dielectric and ferroelectric properties of doped-BIT materials were also investigated. The decrease in the electrical conductivity allowed the doped samples to be poled to develop piezoelectricity. Thermal annealing studies of the samples indicated the donor-doped BIT were suitable candidate materials for high-temperature piezoelectric applications.

Forkation and Oxidation of Titanium Silicide

1986 ◽  
Vol 77 ◽  
Author(s):  
Tzuen-Luh Huang ◽  
Shuit-Tong Lee
Keyword(s):  
High Temperature ◽  
Refractory Metal ◽  
Electron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Auger Electron ◽  
Titanium Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selective Etch ◽  
Furnace Sintering

ABSTRACTRefractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N2 ambient. The oxidation results of Ti suicide formed using RTP in N2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.

Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

2008 ◽  
Vol 104 (9) ◽  
pp. 093706 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Vito Raineri
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Schottky Contacts

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

2018 ◽  
Vol 6 (44) ◽  
pp. 12079-12085 ◽  
Author(s):  
Anna Regoutz ◽  
Gregor Pobegen ◽  
Thomas Aichinger
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Interface Chemistry ◽  
X Ray ◽  
Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

HAFNIUM

Alloy Digest ◽  
1994 ◽  
Vol 43 (3) ◽  
Keyword(s):  
Mechanical Properties ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Electrical Properties ◽  
Cross Section ◽  
Refractory Metal ◽  
Neutron Cross Section ◽  
Allotropic Transformation ◽  
Design Engineers ◽  
Thermal Neutron Cross Section

Abstract HAFNIUM is a commercially available refractory metal which has outstanding corrosion resistance, good mechanical properties, and is readily amenable to standard fabrication techniques. These characteristics, coupled with its high thermal-neutron cross section, high-temperature allotropic transformation, and excellent electrical properties, have made it of increasing interest to design engineers in a variety of fields. This datasheet provides information on composition, physical properties, microstructure, elasticity, and tensile properties. It also includes information on corrosion resistance as well as machining and joining. Filing Code: HF-1. Producer or source: Teledyne Wah Chang Albany.

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