High-κ Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective

Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotropy. Ion implantation is a key process for both n- and p-type selective doping of SiC devices. A subsequent annealing in the temperature range of 1600- 1800°C is required to remove the damage induced by the implantation process and to electrically activate the implanted dopants. The aim of this work is the investigation of the effect of thermal annealing on the damage induced by Phosphorous ion implantation to produce n-type regions.

An SEM Investigation of Annealing Encapsulants for SiC

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.