Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments

2005 ◽  
Vol 202 (4) ◽  
pp. 692-697 ◽  
Author(s):  
R. Pérez ◽  
N. Mestres ◽  
J. Montserrat ◽  
D. Tournier ◽  
P. Godignon
Keyword(s):  
High Temperature ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Barrier Inhomogeneities

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

Refractory Silicide Schottky Contacts To Gaas

1985 ◽  
Vol 54 ◽  
Author(s):  
N. Yokoyama ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
H. Nishi
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Refractory Metal ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
X Ray

ABSTRACTRefractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces. We emphasize the fact that W5Si3/GaAs contacts have extremely stable electrical properties even after annealing at temperatures up to 850°C. Crystallographical properties of the W5S3 film on GaAs, investigated by x-ray and TEM measurement techiques, are also covered. We found that the Schottky electrical characteristics are not affected by whether the film is amorphous or crystalline.

Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing

2006 ◽  
Vol 100 (10) ◽  
pp. 104502 ◽  
Author(s):  
C. P. Chen ◽  
Y. J. Lee ◽  
Y. C. Chang ◽  
Z. K. Yang ◽  
M. Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characteristics ◽  
High Temperature Annealing

Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L351-L353 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Takashi Egawa ◽  
Guang-Yuan Zhao ◽  
Hiroyasu Ishikawa ◽  
Takashi Jimbo ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Electrical Characteristics

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

Sign in / Sign up

Export Citation Format

Share Document