High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

2017 ◽  
Vol 17 (2) ◽  
pp. 157-161 ◽  
Author(s):  
Jong-Min Lee ◽  
Byoung-Gue Min ◽  
Cheol-Won Ju ◽  
Ho-Kyun Ahn ◽  
Jong-Won Lim
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electrical Characteristics ◽  
Storage Test ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Temperature Storage ◽  
Temperature Storage

High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

1991 ◽  
Vol 240 ◽  
Author(s):  
P. F. Tang ◽  
M. S. Fan ◽  
A. A. Illiadis
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Temperature Stability ◽  
High Electron Mobility Transistors ◽  
Input Power ◽  
Junction Temperature ◽  
High Electron ◽  
High Temperature Stability ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

ABSTRACTThe enhanced high temperature gate metallizations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperatures in excess of 250°C. The TiWN/Au system resulted in a sheet resistance of only 11.5 mΩ/□ while TiWSi/Au resulted in 75.0 mΩ/□. The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160 -180 mS/mm at temperatures of 300°C. Thermal analysis indicated the peak junction temperature increase with an input power of 200mW to be less than 18°C at substrate temperature of 60°C.

Sign in / Sign up

Export Citation Format

Share Document