Growth Temperature and Properties of Ge4Sb3Te3 Films

2004 ◽  
Vol 830 ◽  
Author(s):  
W. D. Song ◽  
L. P. Shi ◽  
X. S. Miao ◽  
X. Hu ◽  
H. K. Lee ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Lattice Constant ◽  
Growth Temperature ◽  
Crystalline Phase ◽  
Carrier Density ◽  
Critical Growth ◽  
Salt Crystal ◽  
Crystallization Speed

ABSTRACTThe growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

scholarly journals Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 31110-31114 ◽  
Author(s):  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Zhitang Song
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Change ◽  
High Thermal Stability ◽  
Trade Off ◽  
Fast Phase ◽  
Crystallization Speed

In general, there is trade-off between the crystallization speed and the thermal stability. Here, the Sm–Sb materials simultaneously realize high thermal stability and the ultrafast phase change speed by Sm doping.

Effects of growth temperature on crystal structure, electrical, and photoluminescence of ZnO thin films

2013 ◽  
Author(s):  
Iwan Sugihartono ◽  
S. Bambang ◽  
M. Hikam ◽  
E. Handoko ◽  
H. M. Fan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Growth Temperature ◽  
Zno Thin Films

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 473 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeon ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure

2013 ◽  
Vol 114 (4) ◽  
pp. 043707 ◽  
Author(s):  
M. Očko ◽  
S. Žonja ◽  
K. Salamon ◽  
M. Ivanda ◽  
L. Yu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Raman Spectrum ◽  
Rock Salt ◽  
Salt Crystal ◽  
First Order
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