Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure

2013 ◽  
Vol 114 (4) ◽  
pp. 043707 ◽  
Author(s):  
M. Očko ◽  
S. Žonja ◽  
K. Salamon ◽  
M. Ivanda ◽  
L. Yu ◽  
...  
1994 ◽  
Vol 48 (6) ◽  
pp. 733-736 ◽  
Author(s):  
N. T. McDevitt ◽  
J. S. Zabinski ◽  
M. S. Donley ◽  
J. E. Bultman

Crystalline disorder in thin films plays an important role in determining their properties. Disorder in the crystal structure of MoS2 films prepared by magnetron sputtering and pulsed laser deposition was evaluated with the use of Raman spectroscopy. The peak positions and bandwidths of the first-order Raman bands, in the region 100 to 500 cm−1, were used as a measure of crystalline order. In addition, a low-frequency feature was observed at 223 cm−1 that is not part of the normal first-order spectrum of a fully crystalline specimen. Data presented here demonstrate that this band is characteristic of crystalline disorder, and its intensity depends on the annealing history of the film. This behavior seems to be analogous to the disorder found in graphite thin films.


1989 ◽  
Vol 03 (08) ◽  
pp. 1167-1181 ◽  
Author(s):  
P.A.M. RODRIGUES ◽  
HILDA A. CERDEIRA ◽  
F. CERDEIRA

We develop a model appropriate for describing the Raman spectrum of samples, containing a collection of semiconductor quantum dots with and without dispersion in their linear dimensions. These nanometer size crystallites are assumed to have the same atomic arrangement as that of the bulk material and to be embedded in a host material made up of a different semiconductor of the same crystal structure. The results from our calculations are compared to previous models for polycrystalline materials.


1991 ◽  
Vol 05 (05) ◽  
pp. 381-389 ◽  
Author(s):  
CHUHEI OSHIMA

The energy dispersion curves of surface phonons of the (100) surface of some compounds with a rock-salt crystal structure (TiC, ZrC, HfC, NbC, TaC, MgO, and NiO) have been investigated using electron energy loss spectroscopy. Drastic changes in force constants on all the carbide surfaces are correlated with a rippled structure. On the other hand, the surface phonons of insulating compounds, NiO and MgO (100), have showed dispersion curves agreeing with the predicted ones calculated on the basis of a shell model with bulk dynamical parameters. No changes in the parameters near the NiO and MgO (100) surfaces have been detected. The shielding effect of free electrons on the surface phonon for the transition metal carbide surfaces is discussed.


2004 ◽  
Vol 830 ◽  
Author(s):  
W. D. Song ◽  
L. P. Shi ◽  
X. S. Miao ◽  
X. Hu ◽  
H. K. Lee ◽  
...  

ABSTRACTThe growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.


IUCrJ ◽  
2016 ◽  
Vol 3 (5) ◽  
pp. 377-388 ◽  
Author(s):  
Mattia Sist ◽  
Ellen Marie Jensen Hedegaard ◽  
Sebastian Christensen ◽  
Niels Bindzus ◽  
Karl Frederik Færch Fischer ◽  
...  

SnTe is a promising thermoelectric and topological insulator material. Here, the presumably simple rock salt crystal structure of SnTe is studied comprehensively by means of high-resolution synchrotron single-crystal and powder X-ray diffraction from 20 to 800 K. Two samples with different carrier concentrations (sampleA= high, sampleB= low) have remarkably different atomic displacement parameters, especially at low temperatures. Both samples contain significant numbers of cation vacancies (1–2%) and ordering of Sn vacancies possibly occurs on warming, as corroborated by the appearance of multiple phases and strain above 400 K. The possible presence of disorder and anharmonicity is investigated in view of the low thermal conductivity of SnTe. Refinement of anharmonic Gram–Charlier parameters reveals marginal anharmonicity for sampleA, whereas sampleBexhibits anharmonic effects even at low temperature. For both samples, no indications are found of a low-temperature rhombohedral phase. Maximum entropy method (MEM) calculations are carried out, including nuclear-weighted X-ray MEM calculations (NXMEM). The atomic electron densities are spherical for sampleA, whereas for sampleBthe Te electron density is elongated along the 〈100〉 direction, with the maximum being displaced from the lattice position at higher temperatures. Overall, the crystal structure of SnTe is found to be defective and sample-dependent, and therefore theoretical calculations of perfect rock salt structures are not expected to predict the properties of real materials.


Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.


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