scholarly journals Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 31110-31114 ◽  
Author(s):  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Zhitang Song
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Change ◽  
High Thermal Stability ◽  
Trade Off ◽  
Fast Phase ◽  
Crystallization Speed

In general, there is trade-off between the crystallization speed and the thermal stability. Here, the Sm–Sb materials simultaneously realize high thermal stability and the ultrafast phase change speed by Sm doping.

N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application

2016 ◽  
Author(s):  
Li Yuan ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Jianhao Zhang ◽  
Hua Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
High Thermal Stability ◽  
Change Memory

Superlattice-like Sb-Ge thin films for high thermal stability and low power phase change memory

2018 ◽  
Vol 738 ◽  
pp. 145-150 ◽  
Author(s):  
Shiyu Chen ◽  
Ke Yang ◽  
Weihua Wu ◽  
Jiwei Zhai ◽  
Zhitang Song
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
High Thermal Stability ◽  
Change Memory

Custom design of solid–solid phase change material with ultra-high thermal stability for battery thermal management

2020 ◽  
Vol 8 (29) ◽  
pp. 14624-14633 ◽  
Author(s):  
Changren Xiao ◽  
Guoqing Zhang ◽  
Zhenghui Li ◽  
Xiaoqing Yang
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Material ◽  
Thermal Management ◽  
Solid Phase ◽  
High Thermal Stability ◽  
Management Performance ◽  
Battery Thermal Management ◽  
Custom Design ◽  
Change Material

The custom-designed solid–solid phase change material possesses ultra-high thermal stability and exhibits outstanding battery thermal management performance.

scholarly journals Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures

2020 ◽  
Vol 117 (8) ◽  
pp. 082405 ◽  
Author(s):  
Delin Zhang ◽  
Dingbin Huang ◽  
Ryan J. Wu ◽  
Dustin Lattery ◽  
Jinming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Elevated Temperatures ◽  
Magnetic Thin Films ◽  
High Thermal Stability ◽  
Gilbert Damping ◽  
Thermal Stability Of

scholarly journals Barrierless Cu–Ni–Nb thin films on silicon with high thermal stability and low electrical resistivity– ERRATUM

2014 ◽  
Vol 29 (4) ◽  
pp. 605-605 ◽  
Author(s):  
Xiao Na Li ◽  
Li Rong Zhao ◽  
Zhen Li ◽  
Li Jun Liu ◽  
Cui Min Bao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
High Thermal Stability

Preparation of Mesoporous Titania Thin Films with Remarkably High Thermal Stability

2005 ◽  
Vol 17 (6) ◽  
pp. 1269-1271 ◽  
Author(s):  
Kaixue Wang ◽  
Michael A. Morris ◽  
Justin D. Holmes
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Thermal Stability ◽  
Mesoporous Titania

Growth Temperature and Properties of Ge4Sb3Te3 Films

2004 ◽  
Vol 830 ◽  
Author(s):  
W. D. Song ◽  
L. P. Shi ◽  
X. S. Miao ◽  
X. Hu ◽  
H. K. Lee ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Lattice Constant ◽  
Growth Temperature ◽  
Crystalline Phase ◽  
Carrier Density ◽  
Critical Growth ◽  
Salt Crystal ◽  
Crystallization Speed

ABSTRACTThe growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.

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