Multi-Spectrum Analysis of Growth Temperature Dependent Crystal Structure of MgZnO Thin Films Grown on Sapphire

Author(s):  
Deng Xie ◽  
Chong Chen ◽  
Zhi Ren Qiu ◽  
Hao Jiang ◽  
Dong Sing Wuu ◽  
...  
2004 ◽  
Vol 830 ◽  
Author(s):  
W. D. Song ◽  
L. P. Shi ◽  
X. S. Miao ◽  
X. Hu ◽  
H. K. Lee ◽  
...  

ABSTRACTThe growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.


Author(s):  
Iwan Sugihartono ◽  
S. Bambang ◽  
M. Hikam ◽  
E. Handoko ◽  
H. M. Fan ◽  
...  

2013 ◽  
Vol 63 (5) ◽  
pp. 1055-1059 ◽  
Author(s):  
Wuwei Feng ◽  
Yooleemi Shin ◽  
Sunglae Cho ◽  
Dang Duc Dung

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