Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 473 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeon ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 472 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeong ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Tungsten Nitride ◽  
Si Substrate ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

Thermal Stability of Atomic Layer Deposited Zr:Al Mixed Oxide Thin Films: An in Situ Transmission Electron Microscopy Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Thermal Stability Of

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.

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