Expanding thermal plasma for low-k dielectrics deposition

2003 ◽  
Vol 766 ◽  
Author(s):  
M. Creatore ◽  
Y. Barrell ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Silicon Dioxide ◽  
Thermal Plasma ◽  
Carbon Doped ◽  
Novel Materials ◽  
Subsequent Processing ◽  
Doped Silicon ◽  
Low K ◽  
Processing Steps

AbstractAs the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).

Study of SiH4-based PECVD Low-k Carbon-doped Silicon Oxide

2000 ◽  
Vol 612 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Lisa H. Stecker ◽  
Wei Pan ◽  
David R. Evans ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Additional Cost ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Carbon Doped ◽  
Doped Silicon ◽  
Low K

AbstractIn previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH3)xSiH4−x. In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH4 based gas precursors. The SiH4 based SiOC films have similar gross physical and electrical characteristics to those of (CH3)xSiH4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

The Study of Modified Layers in SiCOH Dielectrics using Spectroscopic Ellipsometry

2003 ◽  
Vol 766 ◽  
Author(s):  
Marcus A. Worsley ◽  
Stacey F. Bent ◽  
Stephen M. Gates ◽  
Kaushik Kumar ◽  
Timothy Dalton ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon Oxide ◽  
Layer Model ◽  
Plasma Etch ◽  
Carbon Doped ◽  
Organosilicate Glass ◽  
Modified Layer ◽  
Intermetal Dielectric ◽  
Low K ◽  
Processing Steps

AbstractThe current challenge in designing new low-k dielectrics is realizing sufficient mechanical and chemical stability such that the material can be integrated into current damascene schemes. The material of interest in this study is a nonporous SiCOH composite (carbon-doped silicon oxide, also known as organosilicate glass “OSG”) for use as an intermetal dielectric (IMD). During integration of this IMD, processing steps such as etch, resist strip and chemicalmechanical polishing for planarization may chemically alter the outer layer of the dielectric. Here, spectroscopic ellipsometry is used to characterize the modified layer of SiCOH films after exposure to different resist strip plasmas. The data are analyzed based on a 2-layer model, consisting of a carbon-deficient layer on the surface of the low-k SiCOH dielectric. This model is supported by XPS and FTIR data. The effects of two types of plasma etch chemistry on the formation of this modified layer were studied, and differences between the two chemistries were found. The 2-layer model accurately describes the modifications produced by the oxidizing plasma, but its description of the modified layer formed by the plasma involving nitrogen is not complete. A 3-layer model with an additional nitrogen-doped layer is suggested.

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