Stability of Carbon-Doped Silicon Oxide Low-k Thin Films

2004 ◽  
Vol 151 (4) ◽  
pp. F73 ◽  
Author(s):  
Y. H. Wang ◽  
R. Kumar
2000 ◽  
Vol 612 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Lisa H. Stecker ◽  
Wei Pan ◽  
David R. Evans ◽  
...  

AbstractIn previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH3)xSiH4−x. In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH4 based gas precursors. The SiH4 based SiOC films have similar gross physical and electrical characteristics to those of (CH3)xSiH4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.


1997 ◽  
Vol 26 (10) ◽  
pp. 995-996 ◽  
Author(s):  
Isao Hasegawa ◽  
Koji Shibusa ◽  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Shoji Nitta

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé

2018 ◽  
Vol 36 (2) ◽  
pp. 021509 ◽  
Author(s):  
Meiliang Wang ◽  
Haripin Chandra ◽  
Xinjian Lei ◽  
Anupama Mallikarjunan ◽  
Kirk Cuthill ◽  
...  

2004 ◽  
Vol 84 (5) ◽  
pp. 717-719 ◽  
Author(s):  
Se-Young Seo ◽  
Kwan-Sik Cho ◽  
Jung H. Shin

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