On Distributions of Defect States in Low-k Carbon Doped Silicon Dioxide Films in Vicinity of Fermi Level

2004 ◽  
Vol 7 (12) ◽  
pp. F89 ◽  
Author(s):  
V. Ligatchev ◽  
T. K. S. Wong
Keyword(s):  
Silicon Dioxide ◽  
Fermi Level ◽  
Defect States ◽  
Carbon Doped ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Low K

Study of SiH4-based PECVD Low-k Carbon-doped Silicon Oxide

2000 ◽  
Vol 612 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Lisa H. Stecker ◽  
Wei Pan ◽  
David R. Evans ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Additional Cost ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Carbon Doped ◽  
Doped Silicon ◽  
Low K

AbstractIn previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH3)xSiH4−x. In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH4 based gas precursors. The SiH4 based SiOC films have similar gross physical and electrical characteristics to those of (CH3)xSiH4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.

Expanding thermal plasma for low-k dielectrics deposition

2003 ◽  
Vol 766 ◽  
Author(s):  
M. Creatore ◽  
Y. Barrell ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Silicon Dioxide ◽  
Thermal Plasma ◽  
Carbon Doped ◽  
Novel Materials ◽  
Subsequent Processing ◽  
Doped Silicon ◽  
Low K ◽  
Processing Steps

AbstractAs the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).

Ultra low-k porous silicon dioxide films from a plasma process

2001 ◽  
Author(s):  
Qingyan Han ◽  
Wei Chen ◽  
C. Waldfried ◽  
O. Escorcia ◽  
N.M. Sbrockey ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Dioxide ◽  
Plasma Process ◽  
Silicon Dioxide Films ◽  
Low K ◽  
Porous Silicon Dioxide

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

2005 ◽  
Vol 86 (15) ◽  
pp. 151914 ◽  
Author(s):  
A. Nazarov ◽  
J. M. Sun ◽  
W. Skorupa ◽  
R. A. Yankov ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Trapping ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Er Doped
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