Characterization of Surfaces and Thin Films by Means of an Ion Microprobe Analyzer

1986 ◽  
Vol 75 ◽  
Author(s):  
Eiichi Izumi ◽  
Yoshinori Ikebe ◽  
Hiroyasu Shichi ◽  
Hifumi Tamura
Keyword(s):  
Thin Films ◽  
Depth Profile ◽  
Ion Beam ◽  
Depth Resolution ◽  
Negative Ion ◽  
Plastic Film ◽  
Ion Microprobe ◽  
Monitoring Method ◽  
Secondary Ion

A variety of materials such as semiconductors, metals, and insulators have been analyzed by use of the Hitachi IMA-3 ion microprobe analyzer. From the depth profile of a GaAs/AQ GaAs superlattice(50Å), a depth resolution of 45Å was obtained at 2350Å below the surface. The stable depth profile of a multilayer plastic film was obtained by using the negative ion beam(O) as a primary ion for charge neutralization. Further, the usefulness of the total ion monitoring method for correcting the changing factors of secondary ion intensity is demonstrated.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Magnetic characterization of ion-beam sputter deposited permalloy thin films

1992 ◽  
Vol 104-107 ◽  
pp. 1847-1850 ◽  
Author(s):  
Michael A. Russak ◽  
Christopher V. Jahnes ◽  
Erik Klokholm ◽  
Bojan Petek
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Characterization ◽  
Sputter Deposited ◽  
Permalloy Thin Films

Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

2004 ◽  
Vol 808 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Scott A. Darveau ◽  
Christopher L. Exstrom
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Cathode Plasma ◽  
Glass Substrates ◽  
Elemental Analyses ◽  
Silicon And Germanium ◽  
Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

scholarly journals Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

2019 ◽  
Vol 34 (5) ◽  
pp. 848-853 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Piotr Caban ◽  
Jacek Baranowski
Keyword(s):  
Mass Spectrometry ◽  
Boron Nitride ◽  
Secondary Ion Mass Spectrometry ◽  
Van Der Waals ◽  
Depth Resolution ◽  
Atomic Resolution ◽  
Epitaxial Layers ◽  
Grain Formation ◽  
Secondary Ion

A refined SIMS procedure allows reaching atomic resolution and characterization of each layer in van der Waals structures separately.

Structural characterization of PbTiO3 thin films prepared by ion beam induced CVD and evaporation of lead

1996 ◽  
Vol 272 (1) ◽  
pp. 99-106 ◽  
Author(s):  
D. Leinen ◽  
A. Caballero ◽  
A. Fernández ◽  
J.P. Espinós ◽  
A. Justo ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Ion Beam

Characterization of magnesium fluoride thin films produced by argon ion beam-assisted deposition

2001 ◽  
Vol 382 (1-2) ◽  
pp. 61-68 ◽  
Author(s):  
L. Dumas ◽  
E. Quesnel ◽  
J.-Y. Robic ◽  
Y. Pauleau
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnesium Fluoride ◽  
Ion Beam Assisted Deposition ◽  
Argon Ion

Characterization of 100 keV silicon negative ion implanted SiO2 thin films

2020 ◽  
Author(s):  
S. B. Vishwakarma ◽  
S. K. Dubey ◽  
R. L. Dubey ◽  
I. Sulania ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Thin Films ◽  
Negative Ion ◽  
Ion Implanted
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