The Effect of Damage Density Profile on Moving specles in Ion-Induced Reactions

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Tao ◽  
C. A. Hewett ◽  
S. S. Lau ◽  
Ch. Buchal ◽  
D. B. Poker
Keyword(s):  
Thermal Annealing ◽  
Density Profile ◽  
Mixing Conditions ◽  
Damage Distribution ◽  
Present Evidence ◽  
Atomic Transport ◽  
Implantation Damage ◽  
Metal Semiconductor Metal ◽  
Metal Metal ◽  
Two Factors

AbstractWe present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal-semiconductor, metal-metal and semiconductorsemiconductor systems. The direction of thermal annealing and atomic transport appears to play a role in ion-mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.

Effects of Thermal Annealing on the Properties of GaN Metal-Semiconductor-Metal UV Photodetectors

2010 ◽  
Vol 37 (3) ◽  
pp. 822-825
Author(s):  
赵曼 Zhao Man ◽  
赵梅 Zhao Mei ◽  
范秀英 Fan Xiuying ◽  
周脉鱼 Zhou Maiyu ◽  
谷峰 Gu Feng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Uv Photodetectors ◽  
Metal Semiconductor Metal

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon

1999 ◽  
Vol 607 ◽  
Author(s):  
Hsin-Chiao Luan ◽  
Desmond R. Lim ◽  
Lorenzo Colace ◽  
Gianlorezo Masini ◽  
Gaetano Assanto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Threading Dislocation ◽  
High Quality ◽  
Cyclic Annealing ◽  
Metal Semiconductor Metal ◽  
Dislocation Densities

AbstractWe have grown high-quality Ge epilayers on Si using two-step ultrahigh vacuum/chemical-vapor-deposition followed by post-growth cyclic thermal annealing. Cyclic annealing was effective in reducing threading dislocation densities. The annealing process was improved by optimizing the dislocation velocity. We fabricated and tested metal-semiconductor-metal planar photodetectors using Ge epilayers grown on Si. Our measurement showed an improvement in the photodetector performance as a result of the improved materials quality. The process described in this paper for making high-quality Ge on Si is uncomplicated and can be easily integrated with Si CMOS processes.

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

scholarly journals Skeptical appeal: the source-content bias

2020 ◽  
Author(s):  
John Turri
Keyword(s):  
Popular Culture ◽  
Perceptual Belief ◽  
Present Evidence ◽  
Radical Skepticism ◽  
Specific Combination ◽  
Two Factors ◽  
Content Bias

Radical skepticism is the view that we know nothing, or at least next to nothing. Nearly no one actually believes that skepticism is true. Yet it has remained a serious topic of discussion for millennia and it looms large in popular culture. What explains its persistent and widespread appeal? How does the skeptic get us to doubt what we ordinarily take ourselves to know? I present evidence from two experiments that classic skeptical arguments gain potency from an interaction between two factors. First, people evaluate inferential belief more harshly than perceptual belief. Second, people evaluate inferential belief more harshly when its content is negative (i.e. that something is not the case) than when it’s positive (i.e. that something is the case). It just so happens that potent skeptical arguments tend to focus our attention on negative inferential beliefs, and we are especially prone to doubt that such beliefs count as knowledge. That is, our cognitive evaluations are biased against this specific combination of source and content. The skeptic sows seeds of doubt by exploiting this feature of our psychology.

Electron microscope study of differential ion implantation damage in AlAs/GaAs epitaxial layers

1990 ◽  
Vol 48 (4) ◽  
pp. 584-585
Author(s):  
A G Cullis ◽  
D C Jacobson ◽  
J M Poate ◽  
P W Smith
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Ion Damage ◽  
High Resolution Tem ◽  
Superlattice Structures ◽  
Heteroepitaxial Layers

Ion implantation processing applied to superlattice structures can produce controlled intermixing of the different strata and a range of studies have focused with special interest upon the GaAs-GaAlAs and InP-InGaAs systems. However, there can be marked differences in the susceptibilities of the superlattice materials to ion damage build-up which, thus, complicates interpretation. The present work has applied transmission electron microscopy (TEM) to the study of differential ion damage in the GaAs-AlAs system, together with an examination of thermal annealing behaviour.Single ˜90nm heteroepitaxial layers of AlAs were produced within a GaAs matrix grown by molecular beam epitaxy upon (001) GaAs substrates. Ion damage was introduced (77K) using Si+ ions with overlaid doses of 3.5×l014 ions/cm2 at 150keV and 7×1014 ions/cm2 at 200keV. Some samples were then subjected to rapid thermal annealing for 10s at 600°C or 800°C. The structure of the material after the various treatments was studied in cross-sectional samples by both conventional and high resolution TEM using a JEM 4000EX instrument operated at 400kV.

Atomic Transport in LaAlO[sub 3] Films on Si Induced by Thermal Annealing

2006 ◽  
Vol 9 (6) ◽  
pp. F49 ◽  
Author(s):  
L. Miotti ◽  
C. Driemeier ◽  
F. Tatsch ◽  
C. Radtke ◽  
V. Edon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Atomic Transport
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