Interfacial Tunnel Structures In Cmos Source/Drain Regions Following Selective Deposition of Tungsten

1986 ◽  
Vol 71 ◽  
Author(s):  
J.M. Deblasi ◽  
D.K. Sadana ◽  
M.H. Norcott
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Deposition ◽  
Selective Chemical ◽  
Crystallographic Defects

AbstractThe influence of B and As ion implantation on the location and density of interfacial tunnels, the extent of lateral encroachment, the amount of silicon consumed, and the crystallographic defects in CMOS source/drain structures following selective chemical vapor deposition of tungsten has been characterized.

Formation of Raised Source/Drain Junctions by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 387 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Selective Deposition ◽  
Thermal Chemical Vapor Deposition ◽  
Solid Diffusion ◽  
Diffusion Source

AbstractIn this paper, we present alternative uses of rapid thermal chemical vapor deposition (RTCVD) in forming junctions for the raised source/drain MOSFET. The results will include applications of epitaxial silicon, SixGe1−x and TiSi2 all selectively deposited in dedicated coldwalled, lamp heated high or ultra high vacuum RTCVD reactors. Two general approaches will be considered : 1) ultra shallow junction formation in silicon followed by a selective deposition process to form a raised contact, 2) selective deposition to obtain a layer that can be used as a solid diffusion source and as a sacrificial layer for self-aligned silicide formation. In the first approach, junctions are formed typically by low energy ion-implantation. In this paper, we present rapid thermal vapor phase doping (RTVPD) as an alternative to ion-implantation to form defect free ultra-shallow junctions in Si. The method involves exposing a silicon wafer to a dopant gas (such as B2H6) at a moderate temperature (∼600°C) for a short time and subsequent annealing for drive-in. This is followed by either selective epitaxy and conventional self-aligned TiSi2 formation or selective deposition of a low-resistivity C54 TiSi2 from TiCl4 and SiH4. In the second approach, first, a semiconductor (Si, polysilicon or SixGe1−x) is deposited selectively. If the material is undoped, doping can be achieved by ion-implantation. In-situ doping is also possible as will be shown with p- and n-type SixGe1−x at temperatures as low as 625°C using B2H6 or PH3. The doped layer is then used as a solid diffusion source to form the junctions by out-diffusion. Using these different approaches, we present examples of high quality junctions in Si as shallow as a few hundred angstroms. The techniques are compared based upon their robustness, complexity, equipment and thermal budget requirements.

Selective deposition of diamond crystals by chemical vapor deposition using a tungsten‐filament method

1988 ◽  
Vol 53 (19) ◽  
pp. 1815-1817 ◽  
Author(s):  
K. Hirabayashi ◽  
Y. Taniguchi ◽  
O. Takamatsu ◽  
T. Ikeda ◽  
K. Ikoma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Filament ◽  
Selective Deposition ◽  
Diamond Crystals

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

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