Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation

2001 ◽  
Vol 90 (8) ◽  
pp. 3887-3893 ◽  
Author(s):  
T. Yasuda ◽  
M. Nishizawa ◽  
S. Yamasaki
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Beam Irradiation ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Selective Deposition

Effect of MeV Electron Beam Irradiation on Graphene Grown by Thermal Chemical Vapor Deposition

2013 ◽  
Vol 52 (12R) ◽  
pp. 125104 ◽  
Author(s):  
Wooseok Song ◽  
Su Il Lee ◽  
Yooseok Kim ◽  
Dae Sung Jung ◽  
Min Wook Jung ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Beam Irradiation ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Thermal Chemical Vapor Deposition

Electron Beam Assisted Chemical Vapor Deposition of Gold in an Environmental Tem

1995 ◽  
Vol 388 ◽  
Author(s):  
John Kouvetakis ◽  
Renu SharmA ◽  
B. L. Ramakrisna ◽  
Jeff Drucker ◽  
Paul Seidler
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
In Situ Observation ◽  
Beam Irradiation ◽  
Environmental Tem ◽  
Diffraction Patterns

AbstractWe demonstrate a novel technique for in situ observation of the chemical vapor deposition of high purity gold using ethyl(trimethylphosphine)gold(I). an environmental transmission electron microscope with 3.8 eV resolution was used to observe and compare the growth of the material with or without electron beam irradiation (120 keV) with Si (100) substrate temperatures ranging from 125-200 °C. Typical precursor pressures of 10-4 Torr and E-beam irradiation resulted in rapid growth of virtually continuous gold films. thermal deposition without the beam resulted in low nucleation densities, low deposition rates, and island-like growth. Images and diffraction patterns acquired during the deposition process indicated polycrystalline gold and elemental analysis at the nanometer scale showed that the films had excellent chemical purity. atomic force microscopy was also used to investigate the three dimensional morphology of the materials. the most notable result of the deposition process is the dramatic enhancement of the growth rate due to the beam irradiation.

In Situ Real Time Observation of Chemical Vapor Deposition Using an Environmental Transmission Electron Microscope

1995 ◽  
Vol 404 ◽  
Author(s):  
Jeff Drucker ◽  
Renu Sharma ◽  
Karl Weiss ◽  
B. L. Ramakrishna ◽  
John Kouvetakis
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Electron Beam Irradiation ◽  
Film Growth ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Transmission Electron

AbstractMaterial synthesis by chemical vapor deposition (CVD) in a number of material systems has been investigated in real time using an environmental transmission electron microscope (ETEM) with 3.8 Å resolution. Here, we will focus on two metal / insulator systems. Al CVD onto SiO2 from trimethyl amine alane and Au CVD from ethyl (trimethylphosphine) gold (I), also onto SiO2. For Al deposition, dendritic growth was observed for all pressure / substrate temperature combinations investigated for growth on untreated SiO2. Subsequent to reaction of the substrate surface with TiC14, almost immediate continuous Al film growth was observed. Growth rates for the Al film could be measured in situ by monitoring the evolution of the growth front at the Al/vacuum interface. In this system, very little enhancement in the metal film growth rate was observed as a consequence of electron beam irradiation for continuous films grown after TiCl4 pretreatment.. This dramatically contrasts with the case of Au CVD investigated. In this instance, growth rate enhancements of up to 150 times were observed during electron beam irradiation as compared to purely pyrolytic decomposition of the precursor on the insulator surface. This growth rate enhancement decreased monotonically with substrate temperature. We surmise that this effect is related to the ratio of precursor surface residence time prior to ecomposition to the probability of collision from the impinging electron beam.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

2021 ◽  
Author(s):  
Seunghwan Lee ◽  
GeonHo Baek ◽  
Hye-mi Kim ◽  
Yong-Hwan Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Atomic Layer Deposition ◽  
Electron Beam Irradiation ◽  
Molecular Layer ◽  
Atomic Layer ◽  
Beam Irradiation ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Amorphous Structures

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

Sign in / Sign up

Export Citation Format

Share Document