A-SI:H Image Sensors: Some Aspects of Physics and Performance

1986 ◽  
Vol 70 ◽  
Author(s):  
K. Rosan ◽  
G. Brunst
Keyword(s):  
Thin Film ◽  
Dynamic Range ◽  
Image Sensors ◽  
Major Influence ◽  
Readout Circuit ◽  
Bulk Properties ◽  
Sensor Performance ◽  
Large Size ◽  
And Performance ◽  
High Photosensitivity

ABSTRACTHigh photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.

High Sensitivity Polymer Photosensors for Image Sensing Applications

1998 ◽  
Vol 508 ◽  
Author(s):  
Gang Yu ◽  
Jian Wang ◽  
Jon McElvain ◽  
Alan J. Heeger
Keyword(s):  
Dynamic Range ◽  
Spectral Response ◽  
Polymeric Materials ◽  
High Sensitivity ◽  
Large Area ◽  
Image Sensing ◽  
Sensing Applications ◽  
Large Size ◽  
Photodiode Arrays ◽  
High Photosensitivity

AbstractConjugated polymers and polymer blends were developed for photosensing applications. Large size photosensors fabricated in ITO/polymer/metal configuration show high photosensitivity, 0.1-0.4 A/Watt in visible and near UV, as good as that made with inorganic semiconductors. The processability of the polymeric materials allows these photosensors be made in large size, onto substrates in desire shape, or even in flexible form, hybridized or integrated with optical devices or electronic devices. Large area, full-color, digital image sensing is demonstrated using photodiode arrays made from semiconducting polymers. The photodiode arrays, fabricated by casting the semiconducting polymer from solution at room temperature, have high photosensitivity, low dark current and large dynamic range. Photo-detection with desired spectral response or multi-band selection are also demonstrated.

Technology and Performance of TFA (Thin Film on ASIC-Sensors

1994 ◽  
Vol 336 ◽  
Author(s):  
H. Fischer ◽  
J. Schulte ◽  
P. Rieve ◽  
M. Böhm
Keyword(s):  
Thin Film ◽  
Multilayer Structure ◽  
Sensor Array ◽  
Dynamic Range ◽  
Operation Mode ◽  
Digital Signal ◽  
Image Sensor ◽  
Optical Detector ◽  
And Performance ◽  
Silicon Based

ABSTRACTA TFA image sensor consists of an amorphous silicon based multilayer structure on top of a crystalline ASIC. The Multilayer acts as the optical detector, whereas the ASIC performs analog or digital signal processing for each individual pixel. Depending on the operation Mode, the dynamic range of the detector exceeds the performance of conventional CCDs by far. Pixel electronics which is adapted to the requirements of the detector can thereby maximize the dynamic range of the complete sensor array. Crosstalk among adjacent pixels can be eliminated by technological or electronic Means.

Fabrication and Performance Investigation of Karma Alloy Thin Film Strain Gauge

2021 ◽  
Author(s):  
Peng Lei ◽  
Congchun Zhang ◽  
Yawen Pang ◽  
Shenyong Yang ◽  
Meiju Zhang
Keyword(s):  
Thin Film ◽  
Strain Gauge ◽  
Alloy Thin Film ◽  
And Performance

scholarly journals Integrating Resonator to Enhance Magnetometer Microelectromechanical System Implementation with ASIC Compatible CMOS 0.18 μm Process

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 635
Author(s):  
Chih-Hsuan Lin ◽  
Chao-Hung Song ◽  
Kuei-Ann Wen
Keyword(s):  
Resonant Frequency ◽  
Tuning Range ◽  
Dynamic Range ◽  
Ambient Pressure ◽  
Readout Circuit ◽  
Microelectromechanical System ◽  
Correlated Double Sampling ◽  
Driving Current ◽  
Mems Oscillator ◽  
Oscillation Characteristics

In this study, a multi-function microelectromechanical system (MEMS) was integrated with a MEMS oscillator, using the resonant frequency oscillation characteristics of the oscillator to provide the Lorentz current of the magnetometer to enhance a large dynamic range of reading, which eliminates the off-chip clock and current generator. The resonant frequency can be adjusted by adjusting the bias voltage of the oscillator to further adjust the sensitivity of the magnetometer. With the mechanical Q value characteristic, a great dynamic range can be achieved. In addition, using the readout circuit of the nested chopper and correlated double-sampling (CDS) to reduce the noise and achieve a smaller resolution, the calibration circuit compensates for errors caused by the manufacturing process. The frequency of the tuning range of the proposed structure is 17,720–19,924 Hz, and the tuning range of the measurement result is 110,620.36 ppm. The sensitivities of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 218.3, 74.33, and 7.5 μV/μT for ambient pressure of 760 torr. The resolutions of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 3.302, 9.69, and 96 nT/√Hz for ambient pressure of 760 torr.

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