Technology and Performance of TFA (Thin Film on ASIC-Sensors

1994 ◽  
Vol 336 ◽  
Author(s):  
H. Fischer ◽  
J. Schulte ◽  
P. Rieve ◽  
M. Böhm
Keyword(s):  
Thin Film ◽  
Multilayer Structure ◽  
Sensor Array ◽  
Dynamic Range ◽  
Operation Mode ◽  
Digital Signal ◽  
Image Sensor ◽  
Optical Detector ◽  
And Performance ◽  
Silicon Based

ABSTRACTA TFA image sensor consists of an amorphous silicon based multilayer structure on top of a crystalline ASIC. The Multilayer acts as the optical detector, whereas the ASIC performs analog or digital signal processing for each individual pixel. Depending on the operation Mode, the dynamic range of the detector exceeds the performance of conventional CCDs by far. Pixel electronics which is adapted to the requirements of the detector can thereby maximize the dynamic range of the complete sensor array. Crosstalk among adjacent pixels can be eliminated by technological or electronic Means.

scholarly journals Fabrication and Performance Evaluation of Thin Film RTD Temperature Sensor Array on a Curved Glass Surface

2011 ◽  
Vol 9 (2) ◽  
pp. 34-39 ◽  
Author(s):  
Chul-Hee Ahn ◽  
Hyoung-Hoon Kim ◽  
Sang-Hu Park ◽  
Chang-Min Son ◽  
Jeung-Sang Go
Keyword(s):  
Thin Film ◽  
Performance Evaluation ◽  
Temperature Sensor ◽  
Glass Surface ◽  
Sensor Array ◽  
Curved Glass ◽  
And Performance

Flexible a-Si:H-based Image Sensors Fabricated by Digital Lithography

2007 ◽  
Vol 989 ◽  
Author(s):  
William S. Wong ◽  
TseNga Ng ◽  
Michael L. Chabinyc ◽  
Rene A. Lujan ◽  
Raj B. Apte ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Image Sensors ◽  
X Ray ◽  
Ink Jet ◽  
Sensor Devices ◽  
Poly Ethylene ◽  
Silicon Based

AbstractAmorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.

A-SI:H Image Sensors: Some Aspects of Physics and Performance

1986 ◽  
Vol 70 ◽  
Author(s):  
K. Rosan ◽  
G. Brunst
Keyword(s):  
Thin Film ◽  
Dynamic Range ◽  
Image Sensors ◽  
Major Influence ◽  
Readout Circuit ◽  
Bulk Properties ◽  
Sensor Performance ◽  
Large Size ◽  
And Performance ◽  
High Photosensitivity

ABSTRACTHigh photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.

A Novel α-Si(C):H Color Sensor Array

1994 ◽  
Vol 336 ◽  
Author(s):  
Q. Zhu ◽  
H. Stiebig ◽  
P. Rieve ◽  
H. Fischer ◽  
M. Böhm
Keyword(s):  
Sensor Array ◽  
Dynamic Range ◽  
Color Image ◽  
Image Sensor ◽  
Potential Candidate ◽  
Signal Distortion ◽  
Image Capture ◽  
Color Sensor ◽  
Wide Range ◽  
Single Pixel

ABSTRACTA novel α-Si(C):H color sensor array has been developed. In this device a single pixel consists of a combination of an amorphous silicon nipin detector and a crystalline operational amplifier. Steady state and transient opto electronic behavior of the nipin structure have been studied in order to optimize the design of the image sensor. Nipin structures are found to exhibit excellent dynamic range (125 dB) and linearity. The crystalline electronics causes only very little signal distortion which makes this sensor device a potential candidate for color image capture and processing for a wide range of illumination levels.

Combining slow-scan CCD images to extend image size and dynamic range

1991 ◽  
Vol 49 ◽  
pp. 524-525
Author(s):  
G.Y. Fan ◽  
A.J. Gubbens ◽  
O.L. Krivanek ◽  
M.L. Leber ◽  
P.E. Mooney
Keyword(s):  
Electron Microscopy ◽  
Sensor Array ◽  
Dynamic Range ◽  
Primary Electron ◽  
Photographic Film ◽  
Detective Quantum Efficiency ◽  
Image Size ◽  
Recording Medium ◽  
And Performance ◽  
Optical Astronomy

A slow-scan CCD (SSC) camera attached to an electron microscope can record images with 4096 gray levels, nonlinearity less than ±1 %, and a detective quantum efficiency (DQE) greater than 0.5 even with just one primary electron per pixel. Moreover, the images are read out by a computer and are therefore available for further processing as soon as they are acquired. SSC cameras therefore seem destined to replace photographic film as the primary recording medium used in electron microscopy as completely as they have in top-level optical astronomy, where film is now mostly of historical interest.However, the SSCs have two disadvantages compared to photographic film: 1) Fewer number of pixels and 2) the “spill” problem. Currently, SSCs are available for electron microscopists with a sensor array of up to 1024x1024 pixels. (2048x2048 CCD sensors have been developed but their price is high and performance, in terms of pixel defects, is low.) By comparison, a micrograph can record about 10,000x10,000 pixels. And, in order to maximize sensitivity, SSCs do not incorporate anti-blooming wells. As a result, a saturated pixel caused by, for example, a Bragg spot, will “spill” into neighboring pixels.

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Study on Common Ground Testing Platform Technology for Telemetry Core Equipment

2012 ◽  
Vol 220-223 ◽  
pp. 1472-1475
Author(s):  
Qiu Lin Tan ◽  
Xiang Dong Pei ◽  
Si Min Zhu ◽  
Ji Jun Xiong
Keyword(s):  
Data Exchange ◽  
Common Ground ◽  
Digital Signal ◽  
Test System ◽  
Automatic Test System ◽  
Module Design ◽  
The Status ◽  
Output Module ◽  
And Performance ◽  
Hardware Circuit

On the basis of automatic test system of the status in domestic and foreign, by analysis of the various functions and performance of the integrated test system, a design of the integrated test system is proposed, FPGA as the core logic controller of the hardware circuit. The system of the hardware design include: digital signal source output modules, analog output module and PCM codec module. Design of hardware circuit are mainly described. In addition, a detailed analysis of some key technologies in the design process was given. Overall, its data exchange with host computer is through the PCI card, data link and bandwidth can be expanded in accordance with the actual needs. The entire system designed in the modular principle, which has a strong scalability.

Sign in / Sign up

Export Citation Format

Share Document