High Sensitivity Polymer Photosensors for Image Sensing Applications

1998 ◽  
Vol 508 ◽  
Author(s):  
Gang Yu ◽  
Jian Wang ◽  
Jon McElvain ◽  
Alan J. Heeger
Keyword(s):  
Dynamic Range ◽  
Spectral Response ◽  
Polymeric Materials ◽  
High Sensitivity ◽  
Large Area ◽  
Image Sensing ◽  
Sensing Applications ◽  
Large Size ◽  
Photodiode Arrays ◽  
High Photosensitivity

AbstractConjugated polymers and polymer blends were developed for photosensing applications. Large size photosensors fabricated in ITO/polymer/metal configuration show high photosensitivity, 0.1-0.4 A/Watt in visible and near UV, as good as that made with inorganic semiconductors. The processability of the polymeric materials allows these photosensors be made in large size, onto substrates in desire shape, or even in flexible form, hybridized or integrated with optical devices or electronic devices. Large area, full-color, digital image sensing is demonstrated using photodiode arrays made from semiconducting polymers. The photodiode arrays, fabricated by casting the semiconducting polymer from solution at room temperature, have high photosensitivity, low dark current and large dynamic range. Photo-detection with desired spectral response or multi-band selection are also demonstrated.

Large Area, Full-Color Image Sensors Made with Organic Semiconductors

1999 ◽  
Vol 558 ◽  
Author(s):  
G. Yu ◽  
G. Srdanov ◽  
J. Wang ◽  
A.J. Heeger
Keyword(s):  
Dark Current ◽  
Dynamic Range ◽  
Color Image ◽  
Sensor Arrays ◽  
Blue Color ◽  
Two Dimensional ◽  
Large Area ◽  
Full Color ◽  
Sensing Applications ◽  
Photodiode Arrays

ABSTRACTLarge area polymer photodiode arrays were designed and fabricated for full-color imaging applications. These sensor arrays are of high photosensitivity, low dark current, large dynamic range and fast response time. The red, green and blue color primaries were achieved by coupling a set of color filters with the polymer sensor pixels with broad response covering entire visible spectrum. Image recovery process from the pixel photocurrent data was developed, which is suitable generally to image arrays with power-law light intensity dependence and with finite pixel dark current. Large sensing length photodiode arrays (2.5”5”) were fabricated with pixel densities from 40 to 100 dot-per-inch. They were used as the sensing elements in page size document scanners. Voltage switchable polymer photodetectors were developed. Their photosensitivity can be switched on and off with external bias. These devices can be used as the sensing elements in x-y addressable two-dimensional sensor matrices. The high on/off switching ratio and high photocurrent/dark-current ratio allow such two-dimensional, passive photosensor matrices be used for image sensing applications.

Monolithic Integrated a-Si:H based pin-Diodes with Orthogonal Liquid Light Guidance Structures for Lab-on-Microchip Applications

2007 ◽  
Vol 989 ◽  
Author(s):  
Heiko Schäfer ◽  
Konstantin Seibel ◽  
Lars Schöler ◽  
Markus Böhm
Keyword(s):  
Dynamic Range ◽  
Spectral Response ◽  
Liquid Core ◽  
High Sensitivity ◽  
Optical Excitation ◽  
Excitation Light ◽  
Active Sensor ◽  
Total Analysis ◽  
Silicon Based ◽  
Sensor Detection

AbstractWe report the fabrication of an amorphous silicon based fluorescence sensor for miniaturized total analysis systems along with experimental results on optical excitation and detection elements. The pin-photodiode exhibits a dynamic range of 110dB and a room temperature dark current of less than 3000 charge carriers per ms according to a detector area of 0.1256mm2. The spectral response is ranging from 320nm to 780nm with a maximum at 600nm @ 80% quantum efficiency. To provide high sensitivity, the excitation light irradiates the fluid orthogonally to the active sensor detection direction by means of specifically designed microfluidic capillaries filled with e.g. methylene iodide or 1,2-o-dibrombenzene. The liquid core, which is enclosed by solid cladding materials, has been calculated to dimensions of a width of 16.75µm or 59.67µm with a height from 15µm to 50µm according to a number of propagating modes inside of 16 or 57, respectively.

scholarly journals Advances in the fabrication of graphene transistors on flexible substrates

2017 ◽  
Vol 8 ◽  
pp. 467-474 ◽  
Author(s):  
Gabriele Fisichella ◽  
Stella Lo Verso ◽  
Silvestra Di Marco ◽  
Vincenzo Vinciguerra ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
High Sensitivity ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Large Area ◽  
Sensing Applications ◽  
Dielectric Performance

Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly(ethylene naphthalate) (PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al2O3 insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al2O3 film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 °C) have been developed without any relevant degradation of the final dielectric performance.

Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

2015 ◽  
Vol 649 ◽  
pp. 793-800 ◽  
Author(s):  
Shuai Guo ◽  
Zhishuang Li ◽  
Guangli Song ◽  
Bingsuo Zou ◽  
Xiaoxu Wang ◽  
...  
Keyword(s):  
Spectral Response ◽  
High Sensitivity ◽  
Large Area

A-SI:H Image Sensors: Some Aspects of Physics and Performance

1986 ◽  
Vol 70 ◽  
Author(s):  
K. Rosan ◽  
G. Brunst
Keyword(s):  
Thin Film ◽  
Dynamic Range ◽  
Image Sensors ◽  
Major Influence ◽  
Readout Circuit ◽  
Bulk Properties ◽  
Sensor Performance ◽  
Large Size ◽  
And Performance ◽  
High Photosensitivity

ABSTRACTHigh photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.

High sensitivity polymer photosensors for image sensing applications

1999 ◽  
Vol 102 (1-3) ◽  
pp. 904-907 ◽  
Author(s):  
Gang Yu ◽  
Yong Cao ◽  
Jian Wang ◽  
Jon McElvain ◽  
Alan J. Heeger
Keyword(s):  
High Sensitivity ◽  
Image Sensing ◽  
Sensing Applications

A Brief Review on E-skin and its Multifunctional Sensing Applications

2019 ◽  
Vol 4 (1) ◽  
pp. 3-14 ◽  
Author(s):  
Mariam Turki Almansoori ◽  
Xuan Li ◽  
Lianxi Zheng
Keyword(s):  
Driving Forces ◽  
Thin Film Transistor ◽  
High Sensitivity ◽  
Research Area ◽  
Organic Thin Film ◽  
Large Area ◽  
Sensing Applications ◽  
Potential Applications ◽  
Monitoring Technologies ◽  
Further Development

Electronic skin (e-skin) is an artificial skin that mimics the sensing capabilities of human skin, which brings many potential applications in robotics, artificial intelligence, prosthetics, and health monitoring technologies. Many attempts associated with various mechanisms/approaches and materials/structures have been developed to match the e-skins to the particular functions of specific applications. Along the time, high sensitivity, mechanical flexibility/stretchability, multifunction, and large area are common driving forces in the research area. New materials, with a variety of structures and unique properties, offer a plenty of freedoms in designing and fabricating e-skins. Significant progress has been made in recently years. This paper firstly reviews the most recent progress on nanomaterial- based e-skins according to four major sensing mechanisms, with an emphasis on the effects of various materials on the sensitivity and stretchability of e-skins. Then the paper updates the progress and effort with respect to multifunctional e-skins and organic-thin-film-transistor based large-area e-skins. Further development possibilities are also briefly discussed.

Floating Gate Negative Capacitance MoS2 Phototransistor with High Photosensitivity

Nanoscale ◽  
2022 ◽  
Author(s):  
Roda Nur ◽  
Takashi Tsuchiya ◽  
Kasidit Toprasertpong ◽  
Kazuya Terabe ◽  
Shinichi Takagi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Sensitivity ◽  
Optoelectronic Properties ◽  
Floating Gate ◽  
Negative Capacitance ◽  
Monolayer Mos2 ◽  
Light Emitting ◽  
Image Sensing ◽  
Sensing Applications ◽  
High Photosensitivity

Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving...

scholarly journals Electrochemiluminescence Biosensors Using Screen-Printed Electrodes

Biosensors ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 118
Author(s):  
Emiliano Martínez-Periñán ◽  
Cristina Gutiérrez-Sánchez ◽  
Tania García-Mendiola ◽  
Encarnación Lorenzo
Keyword(s):  
Dna Analysis ◽  
Dynamic Range ◽  
Chemical Properties ◽  
High Sensitivity ◽  
Portable Devices ◽  
Research Fields ◽  
Sensing Applications ◽  
Screen Printed Electrodes ◽  
Wide Range ◽  
Screen Printed

Electrogenerated chemiluminescence (also called electrochemiluminescence (ECL)) has become a great focus of attention in different fields of analysis, mainly as a consequence of the potential remarkably high sensitivity and wide dynamic range. In the particular case of sensing applications, ECL biosensor unites the benefits of the high selectivity of biological recognition elements and the high sensitivity of ECL analysis methods. Hence, it is a powerful analytical device for sensitive detection of different analytes of interest in medical prognosis and diagnosis, food control and environment. These wide range of applications are increased by the introduction of screen-printed electrodes (SPEs). Disposable SPE-based biosensors cover the need to perform in-situ measurements with portable devices quickly and accurately. In this review, we sum up the latest biosensing applications and current progress on ECL bioanalysis combined with disposable SPEs in the field of bio affinity ECL sensors including immunosensors, DNA analysis and catalytic ECL sensors. Furthermore, the integration of nanomaterials with particular physical and chemical properties in the ECL biosensing systems has improved tremendously their sensitivity and overall performance, being one of the most appropriates research fields for the development of highly sensitive ECL biosensor devices.

Slow-Scan CCD Observation of Backscattering Patterns in SEM

1992 ◽  
Vol 50 (2) ◽  
pp. 1308-1309
Author(s):  
F. Ouyang ◽  
D. A. Ray ◽  
O. L. Krivanek
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Lens System ◽  
Wide Dynamic Range ◽  
Peltier Cooler ◽  
Diffraction Patterns ◽  
Scanning Electron

Electron backscattering Kikuchi diffraction patterns (BKDP) reveal useful information about the structure and orientation of crystals under study. With the well focused electron beam in a scanning electron microscope (SEM), one can use BKDP as a microanalysis tool. BKDPs have been recorded in SEMs using a phosphor screen coupled to an intensified TV camera through a lens system, and by photographic negatives. With the development of fiber-optically coupled slow scan CCD (SSC) cameras for electron beam imaging, one can take advantage of their high sensitivity and wide dynamic range for observing BKDP in SEM.We have used the Gatan 690 SSC camera to observe backscattering patterns in a JEOL JSM-840A SEM. The CCD sensor has an active area of 13.25 mm × 8.83 mm and 576 × 384 pixels. The camera head, which consists of a single crystal YAG scintillator fiber optically coupled to the CCD chip, is located inside the SEM specimen chamber. The whole camera head is cooled to about -30°C by a Peltier cooler, which permits long integration times (up to 100 seconds).

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