Channeling Contrast Microscopy: A Powerful Tool for Examining Semiconductor Structures

1986 ◽  
Vol 69 ◽  
Author(s):  
J. C. McCallum ◽  
R. A. Brown ◽  
E. Nygren ◽  
J. S. Williams ◽  
G. L. Olson
Keyword(s):  
Crystal Growth ◽  
Laser Annealing ◽  
Furnace Annealing ◽  
3 Dimensional ◽  
Semiconductor Structures ◽  
Contrast Microscopy ◽  
Lower Temperature ◽  
Lateral Variations ◽  
Impurity Profiles ◽  
Temperature Furnace

AbstractChanneling contrast microscopy with a He+ microbeam has been employed to measure 3-dimensional damage distributions and impurity profiles in ion implanted laser annealed silicon. Refinements to the technique are described, involving construction of a precision goniometer to allow accurate orientation of the microbeam with respect to micron-scale- sample features. We have found that indium diffusion in amorphous silicon is significantly less for laser annealing than with lower temperature furnace annealing. Lateral variations in the extent of crystal growth have also been observed across laser irradiated areas less than 100μm.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Effects of Laser Annealing on the Furnace Annealed Amorphous Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Koo Han ◽  
Yong-Sang Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Furnace Annealing ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Temperature Furnace

AbstractThe performance of polysilicon thin film transistors fabricated by two-step annealing, which consists of furnace annealing and subsequent excimer laser annealing, is described. It was found that the average grain size of low temperature furnace annealed polysilicon films was several times larger than that of excimer laser annealed polysilicon films while the density of in-grain defect in low temperature furnace annealed films was much higher than that of excimer laser annealed film. The device characteristics of the low temperature furnace annealed polysilicon thin film transistors were improved significantly by postannealing, such as high temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. The density of trap states, which was extracted from the transfer curves of polysilicon thin film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Pulsed laser annealing of semiconductor structures for functional devices

2008 ◽  
Vol 5 (10) ◽  
pp. NA-NA
Author(s):  
N. Misra ◽  
L. Xu ◽  
M. S. Rogers ◽  
S. H. Ko ◽  
C. P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Semiconductor Structures ◽  
Pulsed Laser Annealing

Discharge-Pumped VUV F2 Molecular Laser Annealing of Heavily Se+-Implanted GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Hajime Shibata ◽  
Yunosuke Makita ◽  
Kawakatsu Yamada ◽  
Yutaka Uchida ◽  
Sabro Satoh
Keyword(s):  
Energy Density ◽  
Raman Scattering ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Furnace Annealing ◽  
Implantation Energy ◽  
Molecular Laser ◽  
First Time ◽  
Ion Implanted

ABSTRACTThe capability of discharge-pumped vacuum ultraviolet F2 molecular laser for laser annealing of heavily ion implanted semiconductor was demonstrated for the first time using Se+ heavily ion implanted GaAs. Cr-doped semi-insulationg GaAs wafers were used as the substrates, and the Se+ implantation energy and dose were controlled to 100 keV and 1× 1015 cm-2, respectively. Samples were annealed using a F2 molecular laser ( wavelength = 157 nm ) with a single pulse ( width ~ 20 ns ) in the energy density range from 200 to 800 mJ/cm2 in a nitrogen atmosphere. In addition, furnace annealing was done on separate samples at 850 ºC for 20 minutes in a purified hydrogen atmosphere for comparison. Characterization of the samples was carried out using Raman scattering and ellipsometry. The laser annealed samples exhibited intense Raman scattering LO phonon peaks whose intensity increased with increasing laser power density, whereas the furnace annealed samples exhibited a very weak LO phonon peak. It was demonstrated for the first time that VUV photons can be very effective in annealing ion implantation damage as compared with conventional furnace annealing. The behavior of Raman scattering spectra as a function of laser energy density was explained quantitatively by a “spatial correlation” model. The model made it possible to estimate the average size of the recovered crystal regions in samples for any given laser energy density.

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