Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Rapid Thermal Crystallization Of LPCVD Amorphous Silicon Films

1994 ◽  
Vol 345 ◽  
Author(s):  
A. T. Voutsas ◽  
M. K. Hatalis ◽  
K. R. Olasupo ◽  
A. K. Nanda ◽  
D. Alugbin
Keyword(s):  
High Temperatures ◽  
Defect Density ◽  
Silicon Films ◽  
Electrical Characteristics ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Thermal Crystallization ◽  
High Annealing ◽  
Polysilicon Films ◽  
Crystalline Growth

AbstractThe crystallization of LPCVD a-Si by Rapid Thermal Anneal was investigated. RTA polysilicon films can find application in the fabrication of TFTs for AMLCDs, due to the lower thermal budget associated with fast crystallization at high temperatures. It was found that the grain size of the crystallized films decreases with the temperature, in the range of 700°C to 1100°C, while for higher temperatures the opposite trend is observed. The latter observation was attributed to the high thermal vibration of subcritical clusters, that was assumed responsible for the decline in the nuclei population at high annealing temperatures, combined with the faster crystalline growth rate at high temperatures. RTA silicon films were found to have lower intra-grain defect density, that may result in the improvement of the electrical characteristics of the polysilicon films.

Effects of Laser Annealing on the Furnace Annealed Amorphous Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Koo Han ◽  
Yong-Sang Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Furnace Annealing ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Temperature Furnace

AbstractThe performance of polysilicon thin film transistors fabricated by two-step annealing, which consists of furnace annealing and subsequent excimer laser annealing, is described. It was found that the average grain size of low temperature furnace annealed polysilicon films was several times larger than that of excimer laser annealed polysilicon films while the density of in-grain defect in low temperature furnace annealed films was much higher than that of excimer laser annealed film. The device characteristics of the low temperature furnace annealed polysilicon thin film transistors were improved significantly by postannealing, such as high temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. The density of trap states, which was extracted from the transfer curves of polysilicon thin film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing.

Effects of Electrically Active Impurities on the Epitaxial Regrowth Rate of Amorphized Silicon and Germanium

1981 ◽  
Vol 10 ◽  
Author(s):  
I. Suni ◽  
G. Göltz ◽  
M.-A. Nicolet ◽  
S. S. Lau
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Concentration Level ◽  
Solid Phase ◽  
Surface Layers ◽  
Furnace Annealing ◽  
Epitaxial Regrowth ◽  
Silicon And Germanium ◽  
P Type ◽  
Temperature Furnace

The influence of electrically active n-type (75As) and p-type (11B) impurities on the solid phase epitaxial regrowth of ion-implanted amorphized Si<100> and Ge<100> has been studied for low temperature furnace annealing. Both types of impurity increase the rate of regrowth of both silicon and germanium at a concentration level of 1020 cm−3 . Above this level, 75As retards regrowth in germanium. In compensated surface layers, the regrowth rate slows down to the values observed in self-implanted or intrinsic crystals for both silicon and germanium. The results can be qualitatively explained in terms of electrically induced generation of point defects at the amorphous-crystalline interface.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

A New Electrically Reversible Depassivation/Passivation Mechanism in Polycrystalline Silicon

1996 ◽  
Vol 424 ◽  
Author(s):  
Vyshnavi Suntharalingam ◽  
Stephen J. Fonash
Keyword(s):  
Electric Fields ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Hydrogen Release ◽  
Temperature Bias ◽  
Polysilicon Films ◽  
The Stability ◽  
Quartz Substrates ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractAn electrically reversible depassivation/passivation phenomenon, recently found for hydrogen passivated polysilicon [1] is further explored in this report. This reversible effect is seen in both ECR and RE hydrogen passivated n-channel thin film transistors (TFTs) but is not seen in the corresponding hydrogen passivated pchannel TFrs, nor is it seen in either n- or p-channel TETs before hydrogenation. This phenomenon has been observed when room temperature bias stressing TFTs fabricated on solid phase or laser crystallized polysilicon films on quartz substrates [1]. A model involving hydrogen release or capture at defects, positively charged hydrogen motion in device electric fields, and subsequent hydrogen capture at other defects has been proposed. This phenomenon has significant implications for polycrystalline silicon TFT’ design and operation. By extension, it also offers significant insight into the stability problems of hydrogenated amorphous silicon.

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