High-Jc YBCO Conductors Fabricated By Magnetron Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
N. Savvides ◽  
S. Gnanarajan ◽  
J. Herrmann ◽  
A. Thorley ◽  
A. Katsaros ◽  
...  
Keyword(s):  
Ion Beam ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Similar Degree ◽  
Magnetron Deposition ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Ybco Tapes ◽  
Biaxial Alignment

AbstractSuperconducting YBCO/YSZ/Hastelloy tapes or coated conductors were fabricated by combining ion beam assisted deposition (ILBAD) and magnetron sputtering techniques. The degree of biaxial alignment of the YSZ buffer layers and the epitaxial YBCO films was determined from x-ray pole figures and ø-scans. The best YSZ buffer layers had FWHFM δø= 7°- 10°. The corresponding YBCO tapes achieved a similar degree of biaxial alignment and high critical current density, Jc(77K,0T) = (0.9 – l.25)×106 A cm−2.

Development of conducting buffer architectures using cube textured IBAD-TiN layers

2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Tin Films ◽  
Ion Beam Assisted Deposition ◽  
Conductive Oxide ◽  
Ybco Coated Conductors ◽  
Seed Layers

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.

Epitaxial Growth of Cerium Oxide Buffer Layers on MgO, YSZ and Sapphire Substrates

2000 ◽  
Vol 619 ◽  
Author(s):  
A. Thorley ◽  
S. Gnanarajan ◽  
A. Katsaros ◽  
N. Savvides
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layers ◽  
Metal Target ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Sapphire Substrates ◽  
Pole Figures ◽  
Biaxial Alignment

ABSTRACTWe studied the epitaxial growth of CeO2 thin films deposited onto MgO(100), YSZ(100) and Al2O3(1102 ) (r-plane sapphire) substrates by reactive dc magnetron sputtering of a Ce metal target in an Ar/O2 plasma. The crystalline quality and biaxial alignment of the films was determined using x-ray diffraction techniques (θ-2θ, ω-scans, pole figures, ø-scans). The CeO2/MgO(100) and CeO2/Al2O3(1102) epitaxy was evident at 600°C and developed to nearly perfect biaxial alignment at 850°C with Δø = 5° and 9° respectively. The CeO2/YSZ (100) epitaxy occurred below 300°C while deposition at ≥ 650°C led to single-crystal quality CeO2 films with Δø = 0.2°.

Combined out-of-plane and in-plane texture control in thin films using ion beam assisted deposition

2001 ◽  
Vol 16 (1) ◽  
pp. 210-216 ◽  
Author(s):  
L. Dong ◽  
D. J. Srolovitz ◽  
G. S. Was ◽  
Q. Zhao ◽  
A. D. Rollett
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Symmetry ◽  
Complete Control ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Out Of Plane

Complete control of the texture of a film during growth requires the ability to determine the in-plane and out-of-plane texture simultaneously. We present both computer simulation and experimental evidence for the simultaneous establishment of out-of-plane and in-plane texture during ion beam assisted deposition of aluminum. Channeling along 〈110〉 directions (60° from the normal) creates a {220} out-of-plane orientation rather than the thermodynamically preferred {111} orientation. The ion beam also aligned 〈220〉 directions within the plane of the film. Measured x-ray pole figures confirmed the presence of a strong out-of-plane texture and the presence of two main, twin-related, in-plane texture components. We theoretically demonstrated that it is impossible to completely control both the in-plane and out-of-plane texture with a single ion beam in high-symmetry crystals and two ion beams must be employed to ensure complete texture control.

Ion Beam-Assisted Deposition of Biaxially Aligned CeO2 and ZrO2 Thin Films on Amorphous Substrates

1993 ◽  
Vol 316 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Ion Beam ◽  
Epitaxial Films ◽  
Atom Ratio ◽  
Ion Beam Assisted Deposition ◽  
Temperature Regimes ◽  
Pole Figures ◽  
Amorphous Substrates ◽  
Biaxial Alignment ◽  
Lattice Matched ◽  
Beam Deposition

ABSTRACTDeposition of HTSC and other films is often restricted to lattice-matched single crystal substrates to produce desired epitaxial films. Ion assisted, electron beam deposition (IBAD) has been used to evaporate biaxially aligned ceria and zirconia films on amorphous substrates, thus producing a surface for the deposition of oriented Ba2YCu3O7-δ films. The conditions at which preferential (200) film alignment is obtained has been optimized. The ion-to-atom ratio and ion beam energy are critical in determining beam effects on in-plane alignment Pole figures revealed that both (220) and (111) in-plane alignments parallel to the direction of the ion beam could be obtained depending on the ion-to-atom ratio. Certain orientations dominate at various temperature regimes on different substrates. The orientation regimes were similar on all substrates, but the temperature at which the trends were observed differed with substrate. Microstructures were correlated to orientations, with the desired (200) orientation being columnar. A mechanism to account for this biaxial alignment is proposed.

Growth mechanism of biaxially textured YSZ films deposited by ion-beam-assisted deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3149-3152 ◽  
Author(s):  
J. Wiesmann ◽  
J. Dzick ◽  
J. Hoffmann ◽  
K. Heinemann ◽  
H. C. Freyhardt
Keyword(s):  
Growth Mechanism ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
Growth Selection ◽  
Biaxial Alignment ◽  
Hts Films ◽  
Deposition Conditions

Biaxially textured YSZ films have a large technical relevance for power or electronic applications of HTS films. The YSZ serves as a diffusion barrier and as a template for an epitaxial growth of the HTS. On polycrystalline substrates the biaxial alignment is achieved by using an ion-beam-assisted deposition method. The best obtained textures were characterized by a full width at half maximum of 7° in an 〈111〉 x-ray diffraction Φ scan. The FWHM decreases with increasing film thickness. The growth mechanism is investigated with respect to three important effects: nucleation, growth selection, and homoepitaxial growth. It could be shown that during nucleation at the beginning of deposition the angle between the assisting beam and the substrate normal has to be fixed at 55°, whereas during the growth selection this angle can be varied. Especially the homoepitaxial effects allow changes in the deposition conditions without destroying the already achieved texture quality.

Biaxial alignment control of YBa2Cu3O7−x films on random Ni-based alloy with textured yttrium stabilized-zirconia films formed by ion-beam-assisted deposition

1997 ◽  
Vol 12 (11) ◽  
pp. 2913-2923 ◽  
Author(s):  
Y. Iijima ◽  
M. Hosaka ◽  
N. Tanabe ◽  
N. Sadakata ◽  
T. Saitoh ◽  
...  
Keyword(s):  
Ion Beam ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Azimuthal Distribution ◽  
Ybco Films ◽  
Strongly Coupled ◽  
Ion Beam Assisted Deposition ◽  
Biaxial Alignment ◽  
Pinning Properties ◽  
Zirconia Films

Biaxially aligned YBa2Cu3O7−x (YBCO) films were fabricated on random Ni-based alloy tapes with yttrium stabilized-zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD). Ar+ ion bombardment was found to have two significant effects on the crystalline structure of the YSZ buffer layers: to align a [100] axis with the substrate normal and a [111] axis with the bombarding beam axis. The resulting YSZ films were biaxially aligned on the random polycrystalline tapes, and the azimuthal distribution of the a- and b-axes of YBCO films on the top of the YSZ films was restricted to 10° FWHM. A critical current density (Jc) of 1.13 × 106 A/cm2 (77 K, 0 T) was obtained, and 1.1 × 105 A/cm2 was maintained at 5 T (77 K, B⊥c). The existence of both intrinsic and extrinsic pinning properties was clearly observed in the angular dependence of Jc with B⊥I. The longitudinal field effect on Jc was clearly observed, which indicated straight transport currents. This is evidence for strongly coupled current paths that demonstrate the bulk pinning properties of YBCO.

Direct growth of LaMnO3 cap buffer layers on ion-beam-assisted deposition MgO for simplified template-based YBa2Cu3O7−δ-coated conductors

2008 ◽  
Vol 23 (11) ◽  
pp. 3021-3028 ◽  
Author(s):  
O. Polat ◽  
T. Aytug ◽  
M. Paranthaman ◽  
K. Kim ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Substantial Effect ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Manufacturing Cost ◽  
Ion Beam Assisted Deposition ◽  
Magnetron Sputter Deposition ◽  
Direct Growth ◽  
Key Issues ◽  
Mgo Layers

Simplification of the ion-beam-assisted deposition (IBAD) buffer architecture is one of the key issues for reduced manufacturing cost of second-generation superconducting wire production. In this work, we studied various radio frequency magnetron sputter deposition conditions for epitaxial growth of LaMnO3 (LMO) layers, with varying thicknesses, directly on IBAD-MgO without homo-epitaxial MgO layers. Performance of the simplified LMO/IBAD-MgO samples was qualified by pulsed-laser-deposited 1-μm-thick YBa2Cu3O7−δ (YBCO) coatings. Detailed property characterizations revealed that though the growth temperature has a substantial effect on the texture of LMO layers, neither LMO thickness nor different sputter gas compositions had a significant effect on the performance of YBCO films. The superconducting properties of YBCO on LMO/IBAD-MgO are found to be similar to those obtained on templates having homo-epitaxial MgO layers. The present results underscore the strong potential of LMO as a single cap layer directly on IBAD-MgO for the development of a simplified IBAD architecture.

Engineered reactive cosputtered SmxZr1–xOythin films as buffer layers for YBa2Cu3O7−δcoated conductors

2007 ◽  
Vol 22 (4) ◽  
pp. 1082-1086 ◽  
Author(s):  
L. Stan ◽  
P.N. Arendt ◽  
I.O. Usov ◽  
H. Wang ◽  
S.R. Foltyn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Field Measurements ◽  
Lattice Parameter ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Manufacturing Cost ◽  
Ybco Films ◽  
Ion Beam Assisted Deposition ◽  
Wide Range ◽  
Current Densities

This study shows that biaxially textured SmxZr1−xOy(SZO) with a wide range of compositions (0.06 <x< 0.75) can be grown directly on ion-beam-assisted deposition (IBAD) MgO template using reactive cosputtering. The SZO crystal structure can be changed, and the lattice parameter can be tailored (from 5.23 to 5.49 Å) by changing the composition. We have developed a simplified high-temperature superconducting coated conductor using SZO as the buffer layer. YBa2Cu3O7−δ(YBCO) films grown by pulsed laser deposition on the SZO buffered IBAD MgO have self-field critical current densities (Jc) in the 2–4 MA/cm2range. The in-field measurements demonstrate that high-quality YBCO films can be grown on SZO buffered IBAD MgO. The present results are especially important because they were obtained on coated conductors with the simpler architecture by eliminating the additional homoepitaxial layer of MgO. This translates in faster production and lower manufacturing cost.

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