Effects of assisting and sputtering ion current on ion beam assisted deposition textured yttria stabilized zirconia buffer layers of coated conductors

2010 ◽  
Vol 257 (5) ◽  
pp. 1769-1773 ◽  
Author(s):  
Z. Wang ◽  
F. Feng ◽  
Z.J. Zhao ◽  
B.J. Yan ◽  
Y.L. Li ◽  
...  
Keyword(s):  
Ion Beam ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Ion Current ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition

The microstructure of continuously processed Yba2Cu3Oy coated conductors with underlying CeO2 and ion-beam-assisted yttria-stabilized zirconia buffer layers

2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Misfit Strain ◽  
Critical Currents ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Inconel 625 ◽  
Microstructural Development ◽  
Stabilized Zirconia

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

Biaxially textured yttria stabilized zirconia buffer layers on rotating cylindrical surfaces

1997 ◽  
Vol 12 (3) ◽  
pp. 593-595 ◽  
Author(s):  
J. Hoffmann ◽  
J. Dzick ◽  
J. Wiesmann ◽  
K. Heinemann ◽  
F. Garcia-Moreno ◽  
...  
Keyword(s):  
Full Width Half Maximum ◽  
Ion Beam ◽  
Large Fraction ◽  
Rotation Velocity ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Cylinder Surface ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition ◽  
Current Densities

Biaxially textured yttria stabilized zirconia (YSZ) buffer layers are prepared on rotating cylindrical surfaces by an ion-beam-assisted deposition (IBAD) process. A large fraction of the cylinder surface can be coated at the same time, resulting in an effective deposition rate of 40 nm/h for the whole tube circumference (diameter of the tube 12 mm). The in-plane alignment depends on the total film thickness and the rotation velocity. The best in-plane textures achieved so far with a full width half maximum (FWHM) value of 27° are sufficient for the preparation of YbaCuO films with critical current densities above 105 A cm−2 at 77 K and self-fields.

High-Jc YBCO Conductors Fabricated By Magnetron Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
N. Savvides ◽  
S. Gnanarajan ◽  
J. Herrmann ◽  
A. Thorley ◽  
A. Katsaros ◽  
...  
Keyword(s):  
Ion Beam ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Similar Degree ◽  
Magnetron Deposition ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Ybco Tapes ◽  
Biaxial Alignment

AbstractSuperconducting YBCO/YSZ/Hastelloy tapes or coated conductors were fabricated by combining ion beam assisted deposition (ILBAD) and magnetron sputtering techniques. The degree of biaxial alignment of the YSZ buffer layers and the epitaxial YBCO films was determined from x-ray pole figures and ø-scans. The best YSZ buffer layers had FWHFM δø= 7°- 10°. The corresponding YBCO tapes achieved a similar degree of biaxial alignment and high critical current density, Jc(77K,0T) = (0.9 – l.25)×106 A cm−2.

Development of conducting buffer architectures using cube textured IBAD-TiN layers

2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Tin Films ◽  
Ion Beam Assisted Deposition ◽  
Conductive Oxide ◽  
Ybco Coated Conductors ◽  
Seed Layers

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.

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