Ion Beam-Assisted Deposition of Biaxially Aligned CeO2 and ZrO2 Thin Films on Amorphous Substrates

1993 ◽  
Vol 316 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima

ABSTRACTDeposition of HTSC and other films is often restricted to lattice-matched single crystal substrates to produce desired epitaxial films. Ion assisted, electron beam deposition (IBAD) has been used to evaporate biaxially aligned ceria and zirconia films on amorphous substrates, thus producing a surface for the deposition of oriented Ba2YCu3O7-δ films. The conditions at which preferential (200) film alignment is obtained has been optimized. The ion-to-atom ratio and ion beam energy are critical in determining beam effects on in-plane alignment Pole figures revealed that both (220) and (111) in-plane alignments parallel to the direction of the ion beam could be obtained depending on the ion-to-atom ratio. Certain orientations dominate at various temperature regimes on different substrates. The orientation regimes were similar on all substrates, but the temperature at which the trends were observed differed with substrate. Microstructures were correlated to orientations, with the desired (200) orientation being columnar. A mechanism to account for this biaxial alignment is proposed.

2000 ◽  
Vol 616 ◽  
Author(s):  
N. Savvides ◽  
S. Gnanarajan ◽  
J. Herrmann ◽  
A. Thorley ◽  
A. Katsaros ◽  
...  

AbstractSuperconducting YBCO/YSZ/Hastelloy tapes or coated conductors were fabricated by combining ion beam assisted deposition (ILBAD) and magnetron sputtering techniques. The degree of biaxial alignment of the YSZ buffer layers and the epitaxial YBCO films was determined from x-ray pole figures and ø-scans. The best YSZ buffer layers had FWHFM δø= 7°- 10°. The corresponding YBCO tapes achieved a similar degree of biaxial alignment and high critical current density, Jc(77K,0T) = (0.9 – l.25)×106 A cm−2.


1996 ◽  
Vol 68 (17) ◽  
pp. 2360-2362 ◽  
Author(s):  
J. W. Gerlach ◽  
U. Preckwinkel ◽  
H. Wengenmair ◽  
T. Kraus ◽  
B. Rauschenbach

1999 ◽  
Vol 173 (1) ◽  
pp. 167-173 ◽  
Author(s):  
F. Gorris ◽  
C. Krug ◽  
S. Kubsky ◽  
I. J. R. Baumvol ◽  
W. H. Schulte ◽  
...  

1994 ◽  
Vol 354 ◽  
Author(s):  
W. Franzen ◽  
J.D. Demaree ◽  
C.G. Fountzoulas ◽  
J.K. Hirvonen

AbstractA study is presented of the geometrical shape of deposition contours that arise when material is evaporated from a point source onto an inclined substrate, an arrangement common in ion-assisted deposition. The shape of the contours, as determined by the inverse square law and the angles of emission and incidence, is described by a fourth-order algebraic equation in polar coordinates on the surface of the substrate. The equation defines a family of distorted ellipses whose form depends on the angle of tilt. An experimental test of these relations by electron-beam deposition of an ion-bombarded oil film on a tilted silicon wafer will be reported.


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