Effects of buried insulator-sensor interface on the lateral conduction of high fill factor aSi:H imagers

2000 ◽  
Vol 609 ◽  
Author(s):  
M. Mulato ◽  
F. Lemmi ◽  
S. E. Ready ◽  
J. P. Lu ◽  
K. Van Schuylenbergh ◽  
...  
Keyword(s):  
Cross Talk ◽  
Fill Factor ◽  
Silicon Oxynitride ◽  
Readout Circuit ◽  
Sensor Interface ◽  
Active Matrix ◽  
Low Dielectric ◽  
Factor Design ◽  
High Fill Factor

ABSTRACTThe pixel cross-talk is investigated in two-dimensional amorphous silicon (a-Si:H) imager arrays based on the new high fill factor design. In this configuration a continuous a-Si:H sensor extends over the whole surface of the imager, and a buried insulator material with low dielectric constant is used to separate the sensor from the underlying active matrix readout circuit. We find that the lateral conduction between neighboring pixels is mainly determined by the quality of the buried insulator-sensor interface, rather than the specific buried material itself. Minimum cross-talk values below 1% are obtained for different insulator materials including silicon oxynitride and thicker polymer based resins. The quality of this interface also affects trapping and recombination of the photogenerated carriers, influencing important imager properties such as sensitivity and image lag.

High Resolution, High Fill Factor A-SI:H Sensor Arrays for Optical Imaging

1999 ◽  
Vol 557 ◽  
Author(s):  
J.T. Rahn ◽  
F. Lemmi ◽  
P. Mei ◽  
J.P. Lu ◽  
J.B. Boyce ◽  
...  
Keyword(s):  
Fill Factor ◽  
Sensor Arrays ◽  
Dimensional Structure ◽  
Pixel Size ◽  
Large Area ◽  
Leakage Currents ◽  
Active Matrix ◽  
3 Dimensional ◽  
Layer Contact ◽  
High Fill Factor

AbstractAmorphous silicon large area sensor arrays are in production for x-ray medical imaging. The most common pixel design works very well for many applications but is limited in spatial resolution because the available sensor area (the fill factor) vanishes in small pixels. One solution is a 3-dimensional structure in which the sensor is placed above the active matrix addressing. However, such high fill factor designs have previously introduce cross talk between pixels.We present data for a design in which the a-Si:H p-i-n photodiode sensor layer has a continuous i-layer and top p+-layer, and a patterned n+-layer contact to the pixel. Arrays of 64 μm and 75μm pitch have been fabricated and are the highest resolution a-Si:H arrays reported to date. The resolution matches the pixel size, and sensitivity has been improved by the high fill factor. Comparison is made between arrays with standard TFTs and TFTs with self-aligned source and drain contacts. Data line capacitance is improved by use of the self-aligned contacts.Measurements are included on the contact to bias capacitance. The high fill factor design greatly suppresses lateral leakage currents, while retaining ease of processing. Provided illumination levels remain below saturation, the resolution matches expectation for the pixel size.

High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

2008 ◽  
Vol 1066 ◽  
Author(s):  
Yuriy Vygranenko ◽  
A. Sazonov ◽  
D. Striakhilev ◽  
J. H. Chang ◽  
G. Heiler ◽  
...  
Keyword(s):  
Fill Factor ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Low Noise ◽  
Active Matrix ◽  
Interlayer Dielectric ◽  
Sensor Performance ◽  
Data Line ◽  
High Fill Factor ◽  
Low K

ABSTRACTIn this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

scholarly journals High-fill factor micro-mirror array for multi object spectroscopy

2006 ◽  
Author(s):  
Severin Waldis ◽  
Pierre-Andre Clerc ◽  
Frederic Zamkotsian ◽  
Michael Zickar ◽  
Wilfried Noell ◽  
...  
Keyword(s):  
Fill Factor ◽  
High Fill Factor

A high fill factor linear mirror array for a wavelength selective switch

2003 ◽  
Vol 14 (1) ◽  
pp. 147-152 ◽  
Author(s):  
William P Taylor ◽  
John D Brazzle ◽  
Amy Bowman Osenar ◽  
Christopher J Corcoran ◽  
Ijaz H Jafri ◽  
...  
Keyword(s):  
Fill Factor ◽  
High Fill Factor ◽  
Wavelength Selective Switch

A New Fullerene-Free Bulk-Heterojunction System for Efficient High-Voltage and High-Fill Factor Solution-Processed Organic Photovoltaics

2015 ◽  
Vol 27 (11) ◽  
pp. 1900-1907 ◽  
Author(s):  
Zheng Tang ◽  
Bo Liu ◽  
Armantas Melianas ◽  
Jonas Bergqvist ◽  
Wolfgang Tress ◽  
...  
Keyword(s):  
High Voltage ◽  
Organic Photovoltaics ◽  
Fill Factor ◽  
Bulk Heterojunction ◽  
Factor Solution ◽  
Solution Processed ◽  
High Fill Factor

scholarly journals Highly Efficient Porphyrin-Based OPV/Perovskite Hybrid Solar Cells with Extended Photoresponse and High Fill Factor

2017 ◽  
Vol 29 (47) ◽  
pp. 1703980 ◽  
Author(s):  
Ke Gao ◽  
Zonglong Zhu ◽  
Bo Xu ◽  
Sae Byeok Jo ◽  
Yuanyuan Kan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Hybrid Solar Cells ◽  
Highly Efficient ◽  
High Fill Factor

A piezoelectric unimorph actuator based tip-tilt-piston micromirror with high fill factor and small tilt and lateral shift

2011 ◽  
Vol 167 (2) ◽  
pp. 495-501 ◽  
Author(s):  
Yiping Zhu ◽  
Wenjing Liu ◽  
Kemiao Jia ◽  
Wenjun Liao ◽  
Huikai Xie
Keyword(s):  
Fill Factor ◽  
Lateral Shift ◽  
High Fill Factor ◽  
Piezoelectric Unimorph
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