A 20.15% efficiency Si solar cell achieved by means of a high fill factor design and field-effect passivation

2015 ◽  
Author(s):  
Ming Lu ◽  
Liang-Xing Wang
Keyword(s):  
Solar Cell ◽  
Field Effect ◽  
Fill Factor ◽  
Si Solar Cell ◽  
Factor Design ◽  
High Fill Factor

Design and Numerical Simulation on the Optical and Electrical Behavior of a ZnO:Al Nanowire Array a-Si pin Solar Cell

2008 ◽  
Vol 1101 ◽  
Author(s):  
Chang-Wei Liu ◽  
Zingway Pei ◽  
Shu-Tong Chang ◽  
Ren-Yui Ho ◽  
Min-Wei Ho ◽  
...  
Keyword(s):  
Solar Cell ◽  
Carrier Transport ◽  
Fill Factor ◽  
Cell Structure ◽  
Short Circuit ◽  
Nanowire Array ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Sun Light

AbstractOne of the parameters that limit the efficiency of a thin film solar cell, especially the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb most of the sun light, the optical generated carriers will recombination through the numerous gap states in the film that obtained lower short circuit current and fill factor. In the controversy, thinner film could not absorb enough sun light that also limit the short circuit current. In this works, we utilize nanowire structure to solve the conflict between the light absorption and the carrier transport. The designed structure has ZnO:Al nanowire array on the substrate. The p-i-n a-Si solar cell structure is grown along the surface of each ZnO: Al nanowire sequentially. Under sunlight illumination, the light is absorbed in the axis direction of the nanowire. However, the carrier transport is along the radial direction of the solar cell. Therefore, the long nanowire could absorb most of the solar light. In the mean time, the thickness of the solar cell still is thin enough for photo-generated carrier transport. The dependence of short circuit current, open circuit voltage and fill factor to the length, diameter and density of ZnO:Al nanowires were simulated.

Numerical Simulation of a P + a -SiC:H/N + Poly-Si Solar Cell with High Efficiency and Fill Factor

2012 ◽  
Vol 29 (8) ◽  
pp. 087302 ◽  
Author(s):  
Qing-Yi Shao ◽  
A-Qing Chen ◽  
Kai-Gui Zhu ◽  
Juan Zhang
Keyword(s):  
Numerical Simulation ◽  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Si Solar Cell

ITO-free flexible inverted organic solar cell modules with high fill factor prepared by slot die coating

2011 ◽  
Vol 95 (7) ◽  
pp. 1587-1589 ◽  
Author(s):  
B. Zimmermann ◽  
H.-F. Schleiermacher ◽  
M. Niggemann ◽  
U. Würfel
Keyword(s):  
Solar Cell ◽  
Organic Solar Cell ◽  
Fill Factor ◽  
Slot Die Coating ◽  
Slot Die ◽  
Cell Modules ◽  
High Fill Factor

Effects of buried insulator-sensor interface on the lateral conduction of high fill factor aSi:H imagers

2000 ◽  
Vol 609 ◽  
Author(s):  
M. Mulato ◽  
F. Lemmi ◽  
S. E. Ready ◽  
J. P. Lu ◽  
K. Van Schuylenbergh ◽  
...  
Keyword(s):  
Cross Talk ◽  
Fill Factor ◽  
Silicon Oxynitride ◽  
Readout Circuit ◽  
Sensor Interface ◽  
Active Matrix ◽  
Low Dielectric ◽  
Factor Design ◽  
High Fill Factor

ABSTRACTThe pixel cross-talk is investigated in two-dimensional amorphous silicon (a-Si:H) imager arrays based on the new high fill factor design. In this configuration a continuous a-Si:H sensor extends over the whole surface of the imager, and a buried insulator material with low dielectric constant is used to separate the sensor from the underlying active matrix readout circuit. We find that the lateral conduction between neighboring pixels is mainly determined by the quality of the buried insulator-sensor interface, rather than the specific buried material itself. Minimum cross-talk values below 1% are obtained for different insulator materials including silicon oxynitride and thicker polymer based resins. The quality of this interface also affects trapping and recombination of the photogenerated carriers, influencing important imager properties such as sensitivity and image lag.

Passivation of Plasma Oxidized SiOX Layer Using Field Effect on p-type Emitter Surface for High Efficiency c-Si Solar Cell Application

2017 ◽  
Vol 13 (4) ◽  
pp. 49-54
Author(s):  
Sooyoung Park ◽  
Gyungbae Shim ◽  
Sanguk Han ◽  
Shihyun Ahn ◽  
Cheolmin Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Field Effect ◽  
High Efficiency ◽  
Emitter Surface ◽  
Solar Cell Application ◽  
Si Solar Cell ◽  
P Type
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